SEC irf630
Abstract: No abstract text available
Text: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
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IRF630
D84DN2
O-220AB
100ms
IRF630/D84DN2
IRF631/D84DM2-^
SEC irf630
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AN-994
Abstract: IRF630N IRF630NL IRF630NS
Text: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω
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4005A
IRF630N
IRF630NS
IRF630NL
O-220
preferre2-7105
AN-994
IRF630N
IRF630NL
IRF630NS
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SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
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IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
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irf630a
Abstract: sec irf630a
Text: IRF630A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRF630A
O-220
irf630a
sec irf630a
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IRF630NL
Abstract: No abstract text available
Text: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET
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IRF630N
IRF630NS
IRF630NL
O-220
IRF630NL
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AN-994
Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from
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5047A
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF1010
IRF530S
IRF630NL
IRL3103L
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from
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5047A
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
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IRF630N
Abstract: IRF630NL IRF630NS
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
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94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
IRF630N
IRF630NL
IRF630NS
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bly 93a
Abstract: irf630npbf AN-994 IRF630NL IRL3103L
Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET
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IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
bly 93a
irf630npbf
AN-994
IRF630NL
IRL3103L
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AN-994
Abstract: IRF630NL IRL3103L
Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET
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IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF630NL
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
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94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
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IRF630N
Abstract: IRF630NL IRF630NS
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
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94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
IRF630N
IRF630NL
IRF630NS
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Untitled
Abstract: No abstract text available
Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed
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M1910B/C
M1910B/C
M1910C
IRF840
10uH/1A
1N5819
M1910C
500mA
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ac dc led constant current driver
Abstract: No abstract text available
Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed
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M1910B/C
M1910B/C
M1910C
500mA
015X45
ac dc led constant current driver
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GBAN-PVI-1
Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
GBAN-PVI-1
ca3103
266CT125-3E2A
IR7509
ic cd4093
oscillator with CD4093 Types
dc to dc chopper
zener in4148
240XT250-3EA2
IRF540 complementary
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HEXFET Power MOSFET designer manual
Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2
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AN-937
500ns/div
HEXFET Power MOSFET designer manual
GBAN-PVI-1
266CT125-3E2A
HEXFET Power MOSFET designer manual GBAN-PVI-1
TTL dm7400
CD4093 IC details
CD4093
CI 7407
ic cd4093
IR2121 equivalent
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IRL6903
Abstract: F53 DIODE IRL6903L IRL6903S
Text: PD - 9.1640A IRL6903S/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL6903S l Low-profile through-hole (IRL6903L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET
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IRL6903S/L
IRL6903S)
IRL6903L)
IRL6903
F53 DIODE
IRL6903L
IRL6903S
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Untitled
Abstract: No abstract text available
Text: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)
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IRF630A
QQ3b32fl
O-220
7Tb4142
DD3b33D
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SEC irf630
Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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TT70S7Û
IRF630
IRF631
IRF632
IRF633
IRF633
O-220
SEC irf630
IRF630 SEC
for IRF630
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ic 957B
Abstract: 957b 1ay transistor AN957B tektronix 576 curve tracer 957b ic SEC irf630 1rf630 IRF630 HEXFET TRANSISTORS transistor f630
Text: A P PLIC ATIO N NOTE 957B Measuring HEXFET Characteristics H E X F E T is the tradem ark for International Rectifier Pow er M O S F E T s by R. P E A R C E , S. B R O W N , D. G R A N T Summary Curve tracers have generally been designed lor making measurements
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AN-957B
ic 957B
957b
1ay transistor
AN957B
tektronix 576 curve tracer
957b ic
SEC irf630
1rf630
IRF630 HEXFET TRANSISTORS
transistor f630
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IRF630A
Abstract: No abstract text available
Text: IR F 63 0A Power MOSFET • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)
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IRF630A
IRF630A
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IRF630A
Abstract: sec irf630a
Text: Advanced P o w e r MOSFET IR F 6 3 0 A FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD = ■ E xtended S afe O pe ra ting A rea
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IRF630A
O-220
IRF630A
sec irf630a
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L415
Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Text: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching
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1640B
IRL6903S/L
IRL6903S)
IRL6903L)
L415
30V 10.5A p-channel MOSFET
25i5
diode sv 03
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Untitled
Abstract: No abstract text available
Text: PD - 9.1640B International IÖR Rectifier IRL6903S/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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IRL6903S)
IRL6903L)
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