SEC IRF630 Search Results

SEC irf630

Contextual Info: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)

AN-994

Abstract: IRF630N IRF630NL IRF630NS
Contextual Info: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω

Contextual Info: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

SEC irf630

Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Contextual Info: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ‹ Dynamic dv/dt Rating speed power switching applications such as switching ‹ Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.

irf630a

Abstract: sec irf630a
Contextual Info: IRF630A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

IRF630NL

Contextual Info: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET

AN-994

Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from

Contextual Info: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from

IRF630N

Abstract: IRF630NL IRF630NS
Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω

bly 93a

Abstract: irf630npbf AN-994 IRF630NL IRL3103L
Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET

AN-994

Abstract: IRF630NL IRL3103L
Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET

Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω

IRF630N

Abstract: IRF630NL IRF630NS
Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω

ac dc led constant current driver

Contextual Info: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed

ic 957B

Abstract: 957b 1ay transistor AN957B tektronix 576 curve tracer 957b ic SEC irf630 1rf630 IRF630 HEXFET TRANSISTORS transistor f630
Contextual Info: A P PLIC ATIO N NOTE 957B Measuring HEXFET Characteristics H E X F E T is the tradem ark for International Rectifier Pow er M O S F E T s by R. P E A R C E , S. B R O W N , D. G R A N T Summary Curve tracers have generally been designed lor making measurements

IRF630A

Contextual Info: IR F 63 0A Power MOSFET • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)

266CT125-3E2A

Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Contextual Info: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

IRF630A

Abstract: sec irf630a
Contextual Info: Advanced P o w e r MOSFET IR F 6 3 0 A FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD = ■ E xtended S afe O pe ra ting A rea

GBAN-PVI-1

Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Contextual Info: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

HEXFET Power MOSFET designer manual

Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
Contextual Info: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2

L415

Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Contextual Info: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching

IRL6903

Abstract: F53 DIODE IRL6903L IRL6903S
Contextual Info: PD - 9.1640A IRL6903S/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL6903S l Low-profile through-hole (IRL6903L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET

Contextual Info: PD - 9.1640B International IÖR Rectifier IRL6903S/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated