SEC IRF840 Search Results

4.5v to 100v input regulator

Contextual Info: PD-91900 IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRF840A

Abstract: MOSFET IRF 1018 Datasheet AN1001
Contextual Info: PD- 91900A IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

MOSFET IRF 1018 Datasheet

Abstract: IRF840AS AN-994 IRF840A IRF840AL
Contextual Info: PD- 91901B IRF840AS IRF840AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

full bridge mosfet smps

Abstract: MOSFET IRF 1018 Datasheet IRF840A IRF840AS
Contextual Info: PD- 91901A SMPS MOSFET IRF840AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: PD- 91901 SMPS MOSFET IRF840AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: PD- 91901B IRF840AS IRF840AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

AN-994

Abstract: IRF840A IRF840AL IRF840AS DSA0043228 International Rectifier IRF840A
Contextual Info: PD- 91901B IRF840AS IRF840AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

MOSFET IRF840

Abstract: sec irf840 SEC IRF 640 power MOSFET IRF840 IRF840 n-channel mosfet mosfet-irf840 IRF 250V 100A IRF 640 mosfet IRF840
Contextual Info: IRF840 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 Î1 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

SEC IRF 640

Contextual Info: IRF840S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF840A Advanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) : 0.638 £1 (Typ.)

SEC IRF 640

Abstract: IRF840A IRF 250V 100A IRF 640 mosfet IRF MOSFET driver 06382
Contextual Info: IRF840A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 Î1 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

IRF 100A 500V

Abstract: IRF 640 mosfet IRF 250V 100A IRF840S
Contextual Info: IRF840S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 ^ 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

Contextual Info: IRF840S A d van ced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

MOSFET IRF 1018 Datasheet

Abstract: AN1001 IRF1010 IRF840A ST IRF840A International Rectifier IRF840A
Contextual Info: PD- 91900B IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

18mh

Abstract: IRF840A
Contextual Info: $GYDQFHG 3RZHU 026 7 IRF840A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

MOSFET IRF 1018 Datasheet

Abstract: irf 1490 MOSFET IRF 1018 transistor irf 1018 AN1001 IRF id 80A transistor irf 540 MOSFET IRF 540 AS A SWITCH DAT 1018
Contextual Info: PD- 94829 IRF840APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

sec irf840

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF840 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

Contextual Info: IRF840A SMPS MOSFET TO-220AB Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness

IRF840S

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF840S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

IRF840AL

Abstract: IRF840AS SiHF840AL SiHF840AL-E3 SiHF840AS SiHF840AS-E3 IRF840
Contextual Info: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance

48AB

Contextual Info: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance

IRF840A

Abstract: International Rectifier IRF840A ST IRF840A AN1001 IRF1010 4.5v to 100v input regulator
Contextual Info: PD- 91900B IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic