SEC IRFS350 Search Results
SEC IRFS350 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| HDC3020QDEFRQ1 |
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Automotive 0.5% RH digital humidity sensor, 0.19% long-term drift, 400 nA, 4-sec response time 8-WSON -40 to 125 |
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| HDC3020DEFR |
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0.5% RH digital humidity sensor, 0.19% long-term drift, 400 nA, 4-sec response time, NIST traceable 8-WSON -40 to 125 |
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SEC IRFS350 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt |
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IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. | |
AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
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96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. AN-994 IRFB3507 IRFS3507 IRFSL3507 | |
AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
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96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. AN-994 IRFB3507 IRFS3507 IRFSL3507 | |
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Contextual Info: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt |
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6903A IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 Dissi26) | |
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Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G |
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95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418. | |
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Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G |
Original |
95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418. | |
19-AF
Abstract: AN-994
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Original |
5935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB Curren26) 19-AF AN-994 | |
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Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. |
Original |
96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. | |
AN-994Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G |
Original |
95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418. AN-994 | |
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Contextual Info: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.) |
OCR Scan |
IRFS350A | |
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Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V |
OCR Scan |
IRFS350 | |
IRFS350AContextual Info: IRFS350A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V |
OCR Scan |
IRFS350A IRFS350A | |
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Contextual Info: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V |
OCR Scan |
IRFS350A 0G3b333 QG3b33M G03b335 | |
IRFS350Contextual Info: IRFS350 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P F ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V |
OCR Scan |
IRFS350 IRFS350 | |
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sec irfs350Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V |
OCR Scan |
IRFS350 sec irfs350 | |
IRFS350AContextual Info: $GYDQFHG 3RZHU 026 7 IRFS350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFS350A IRFS350A | |
IRFS350
Abstract: sec irfs350
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IRFS350 IRFS350 sec irfs350 | |