SEC IRFZ44 Search Results

irfz44n

Abstract: MOSFET IRFZ44N of irfz44n for irfz44n
Contextual Info: <=p = G en er a l v S e m ic o n d u c t o r _ IRFZ44N N-Channel Enhancement-Mode MOSFET V d s 55V RDS ON)20mQ Id 49A ft - ' ' Features •Dynamic dv/dt Rating ■Repetitive Avalanche Rated ■175°C Operating Temperature ■Ease of Paralleling

Contextual Info: c p ;> G en er a l x! S e m ic o n d u c to r IRFZ44NS N-Channel Enhancement-Mode MOSFET ♦ V d s 55V R d S ON 20m Q I d 49A TO-263AB 0.160 (4.06) 0.190(4.83) 0.380(9.65) . 0.420(10.67) 0.045(1.14) ' 0.055(1.40) 0.21 (5.33) | ^ - Min. ~+\ T 0.320 (8.13)

Contextual Info: IRFZ44ND N-Channel Enhancement-Mode MOSFET Die VDS 55V RDS ON 20mΩ ID 49A Chip Geometry H C EN ET R T NF duct GE ew Pro N D TM Source G Gate S Physical Characteristics Features • Die size : 4040 X 1890µm (159 X 74.4 mils) • Metalization: Top: Al/Si/Cu

IRFZ44ND

Abstract: n 308 al N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: IRFZ44ND N-Channel Enhancement-Mode MOSFET Die VDS 55V RDS ON 20mΩ ID 49A Chip Geometry H C EN ET R T NF duct GE ew Pro N D TM Source G Gate S Physical Characteristics Features • Die size : 4040 X 1890µm (159 X 74.4 mils) • Metalization: Top: Al/Si/Cu

Contextual Info: PD - 94824 AUTOMOTIVE MOSFET IRFZ44VZPbF HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V RDS on = 14.5mΩ G ID = 54A

Contextual Info: IRFZ44NS N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C N t E ET c u R d T NF ro P GE New D TM TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.42 (10.66) 0.21 (5.33) Min. D 0.320 (8.13) 0.360 (9.14)

MOSFET IRFZ44N

Abstract: irfz44n pin of IRFZ44N IRFZ44N MOSFET OF IRFZ44N for irfz44n
Contextual Info: IRFZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t EN ET c R u T NF rod P GE New D TM G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) * 0.155 (3.93)

MOSFET IRFZ44N

Abstract: IRFZ44N for irfz44n pin of IRFZ44N IRFz44n equivalent of irfz44n datasheet of irfz44n ne 22 mosfet datasheet for irfz44n
Contextual Info: IRFZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t N c E u TRENFET w Prod Ne G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D 0.603 (15.32) 0.573 (14.55)

IRFZ44NS

Contextual Info: IRFZ44NS N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C N t E ET c u R d T ENF ro P G New D TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)

AN-1005

Abstract: marking 34a
Contextual Info: PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D RDS on = 12mΩ

34A-100

Abstract: IRFZ44VZ marking 34A IRFZ44VZL IRFZ44VZS
Contextual Info: PD - 94755 IRFZ44VZ IRFZ44VZS IRFZ44VZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V

AN-994

Contextual Info: PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: PD - 94755 IRFZ44VZ IRFZ44VZS IRFZ44VZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V

Contextual Info: PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V RDS on = 12mΩ

Contextual Info: PD - 94797 IRFZ44Z IRFZ44ZS IRFZ44ZL AUTOMOTIVE MOSFET Features n n n n n n Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

AN-994

Abstract: IRFZ44Z IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 95379 IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IRF Power MOSFET code marking

Abstract: IRFZ44 IRFZ44Z AN-994 IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 94797 IRFZ44Z IRFZ44ZS IRFZ44ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

AN-994

Abstract: IRFZ44Z IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 95379 IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

marking 31A

Abstract: AN-994 IRFZ44Z IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 94797 IRFZ44Z IRFZ44ZS IRFZ44ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

IRFZ44V

Abstract: AN-1005 113 y
Contextual Info: PD - 95947 IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

AN-1005

Contextual Info: PD - 95947 IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRFZ44E

Contextual Info: PD - 91671B IRFZ44E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.023Ω G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing