SEE TECH Search Results
SEE TECH Result Highlights (3)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BQ20Z80DBTR-V110 |
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SBS 1.1-Compliant Gas Gauge Enabled w/Impedance Track Tech 38-TSSOP -40 to 85 |
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| BQ20Z80DBTR-V102 |
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SBS 1.1-Compliant Gas Gauge Enabled w/Impedance Track Tech 38-TSSOP -40 to 85 |
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| BQ20Z80DBT-V102 |
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SBS 1.1-Compliant Gas Gauge Enabled w/Impedance Track Tech 38-TSSOP -40 to 85 |
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SEE TECH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors |
OCR Scan |
MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212 | |
BS170 MOTOROLA
Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
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MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006 | |
EQUIVALENT FOR mjf18004
Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
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MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 | |
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Contextual Info: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure. |
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1839A IRHNA57260SE 200Volt, | |
8a 905 surface mount transistor
Abstract: IRHNB7460SE n-Channel mosfet 400v
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IRHNB7460SE 500Volt, 8a 905 surface mount transistor IRHNB7460SE n-Channel mosfet 400v | |
IRHNA7360SEContextual Info: PD - 91398 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. |
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IRHNA7360SE 400Volt, IRHNA7360SE | |
IRHNA7460SEContextual Info: PD - 91399 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. |
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IRHNA7460SE 500Volt, IRHNA7460SE | |
pcb 200W audio amplifier
Abstract: IRHNB7264SE
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PD-91738 IRHNB7264SE 250Volt, pcb 200W audio amplifier IRHNB7264SE | |
IRHNB7360SE
Abstract: AVALANCHE TRANSISTOR 24-A
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IRHNB7360SE 400Volt, IRHNB7360SE AVALANCHE TRANSISTOR 24-A | |
transistor rc 3866
Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
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MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108 | |
IRHM7250SEContextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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PD-91779 IRHM7250SE 200Volt, Rectifi10) IRHM7250SE | |
IRHI7460SEContextual Info: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE |
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IRHI7460SE IRHI7460SE | |
IRHNA7264SEContextual Info: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. |
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IRHNA7264SE 250Volt, IRHNA7264SE | |
IRH7250SE
Abstract: TC Bias
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IRH7250SE 200Volt, Rectif10) IRH7250SE TC Bias | |
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transistor gt 322Contextual Info: PD - 91863 IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.92Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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IRHF7430SE 500Volt, transistor gt 322 | |
IRH7450SEContextual Info: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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1390A IRH7450SE 500Volt, Rectifie10) IRH7450SE | |
IRHM2C50SE
Abstract: IRHM7C50SE
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1252A IRHM2C50SE IRHM7C50SE 600Volt, Internat10) IRHM2C50SE IRHM7C50SE | |
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Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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PD-91779 IRHM7250SE 200Volt, | |
IRHN7250SE
Abstract: mosfet 400a 200V
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1780A IRHN7250SE 200Volt, Rectifi10) IRHN7250SE mosfet 400a 200V | |
IRHM7460SEContextual Info: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91394D IRHM7460SE 500Volt, IRHM7460SE | |
IRHM7360SEContextual Info: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91224C IRHM7360SE 400Volt, IRHM7360SE | |
IRHM7450SE
Abstract: aval
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91223C IRHM7450SE 500Volt, Rectifi10) IRHM7450SE aval | |
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Contextual Info: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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1252A IRHM2C50SE IRHM7C50SE 600Volt, utiliz310) | |
IRHM7264SEContextual Info: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91393D IRHM7264SE 250Volt, IRHM7264SE | |