SEEQ 52B23 Search Results

we vqe 24 d

Abstract: 52B33 TA 8445 45558 SEEQ 52B33 52B13 72482
Contextual Info: / 52B13/52B23/52B33 52B13H/52B23H/52B33H t r r '7 5 000701 P R E L IM IN A R Y D A TA S H E E T Electrically Erasable ROM March 1983 Features • In p u t L atch es ■ S ingle 5 V S u p p ly ■ S p ecified over \f e e ±10% R ange ■ T TL B yte E ras e/B y te W rite /C h ip C lear

SEEQ 52B33

Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
Contextual Info: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL

Contextual Info: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable ROM Features Input Latches • ■ Single 5V Supply ■ Specified over Vq c ±10% Range m TTL Byte Erase/Byte W rite/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write