SEEQ EPROM Search Results

SEEQ eprom

Contextual Info: 86063 MILITARY DRAWING 256K CMOS UV EPROM May 1988 Features Description • 86063 Military Drawing Compliant SEEQ’s 86063 is a military drawing compliant, 262,144b it 32,768 x 8 , ultraviolet erasable CMOS EPROM. The

Contextual Info: seeQ 47F512 512K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET I Block Diagram Features • 64K Byte Flash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Low Power CMOS Process ■ Flash EPROM Cell Technology ■ Fast Byte Write: 225 ps max

sgs M2764

Abstract: intel EPROM 27128 27128 nec NEC 2764 EPROM HY2764 27128 equivalent INTEL 2764 EPROM 27C256 2764 equivalent 2764 8k EPROM
Contextual Info: SEEQ TECHNOLOGY EPROM ALTERNATE SOURCE Alternate Manufacturer AMD AMD AMD AMD AMD AMD ATMEL FUJITSU FUJITSU FUJITSU GE/RCA HITACHI HITACHI HYUNDAI INTEL INTEL INTEL INTEL INTEL INTEL INTEL INTEL NATIONAL NATIONAL NEC NEC NEC NEC OKI OKI PANATECH SGS SGS SIGNETICS

Contextual Info: seeQ 47F010 1024K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ ■ ■ 128K Byte Flesh Erasable Non-Volatile Memory Input Latches for Writing and Erasing Low Power CMOS Process Flash EPROM Cell Technology Fast Byte Write: 225 ys max

48128

Abstract: 27128 eprom MD4000 EEPROM 27128
Contextual Info: O c to b e r 1987 PRELIMINARY DATASHEET Features Description m 128K 16K x 8 • Pin Com patible to 2 7 1 2 8 EPROM ■ Low Cost Non-Volatile Memory ■ Chip E r a s e . . . Electrically SEEQ’s 48128 is a new 128K (16K x 8) memory device which combines both EEPROM and EPROM

ML50

Abstract: seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs
Contextual Info: 2816A/5516A Timer E2 16K Electrically Erasable PROMs O ctober 1988 Features • ■ Description High E ndurance Write Cycles • 5S16A : 1,000,000 C ycles/B yte Minim um • 2816A : 10,000 C ycles/B yte Minim um SEEQ 's 5516A an d 2 8 1 6 A are 5 V on !y, 2K x8 electrically

EPROM M2764

Abstract: seeq 2764 EPROM 27128 27128 27128 eprom 2764 block diagram ci 2764 27128 block diagram 27128 EPROM specification M27128-25
Contextual Info: M2764/M27128 Military Temperature Range E2764/E27128 Technology, Incorporated (Military Temperature Range) 2764/27128 EPROM _ November 1989 Pin Configuration Features • Military and Extended Temperature Range • S 5 ° C to *125°C: M2764 • -5 5 °C to +125°C: M27128

EPROM M2764

Abstract: seeq 2764 SEEQ eprom AM2764 seeq 27128 D2764 2764 block diagram
Contextual Info: M2764/M27128 Military Temperature Range E2764/E27128 Technology, Incorporated (Military Temperature Range) 2764/2/128 EPROM November 1989 Pin Configuration Features • Military and Extended Temperature Range • -5 5 °C to *1 2 5 °C: M2764 • -5 5 ° C to +125°C: M27128

CHN 532

Abstract: 36063
Contextual Info: b3E D • ô in S 3 3 86063 MILITARY DRAWING 256K CMOS UV EPROM Technology, Incorporated SEEi3 0DD3T3Ö 532 « S E E TECHNOLOGY _ May 1988 IN C Features Description ■ ■ SEEO's 86063 is a military drawing compliant, 262,144bit 32,768 x 8 , ultraviolet erasable CMOS EPROM. The

Contextual Info: L.3E D • ô in a aa □□ d 3 c13e o m « s e e 82005 MILITARY DRAWING 64K UV EPROM Technology, Incorporated = _ May 1988 SEES TECHMCi-3GY INC Features Description ■ ■ 82005 Military Drawing Compliant ■

EPROM 2764-25

Abstract: SEEQ EPROM 2764-25 2764-25 SEEQ eprom intel eprom Intelligent algorithm
Contextual Info: 82005 MILITARY DRAWING 64K U V EPROM Technology, Incorporated _ May 1988 SEEQ's 82005 is a military drawing compliant, 21-volt programming, 65,532-bit 8192 x 8 , ultraviolet erasable EPROM. The 64K EPROM is fabricated and tested in

m27c256

Abstract: seeq 27c256 M27C256-20
Contextual Info: M27C256/E27C256 256K CMOS EPROM Technology, Incorporated November 1989 Pin Configuration Features • 256K 32K x 8 CMOS EPROM LEADLESS CHIP CARRIER BOTTOM VIEW DUAL-IN-LINE ■ Military and Extended Temperature Range • -5 5 °C to +125°C: M27C256 • -40°C to +85°C: E27C256

M27C256

Abstract: M27C256-20 US M27C256 E27C256-30 e27c256 27c256 eprom 27C256 E27C256-20 E27C256-25 m27c256-2
Contextual Info: M27C256/E27C256 256K CMOS EPROM Technology, Incorporated November 1989 Pin Configuration Features • 256K 32K x 8 CMOS EPROM LEADLESS CHIP CARRIER BOTTOM VIEW DUAL-IN-LINE ■ Military and Extended Temperature Range • -55°C to +125°C: M27C2S6 • -40° C to +85° C: E27C256

SEEQ 27128-25

Abstract: 27128-25 27128-30 SEEQ 27128-25 MIL-STD-454K 27128-20 SEEQ eprom Seeq 82025
Contextual Info: 82025 MILITARY DRAWING 128K UV EPROM T echnology, Incorporated _ May 1988 SEEQ's 82025 is a military drawing compliant, 21-volt programming, 131,064-bit 16,384 x 8 , ultraviolet erasableEPROM. The 128K EPROM is fabricated and tested

Contextual Info: 86063 MILITARY DRAWING 256K CMOS UV EPROM _ May 1988 Description Features • 86063 Military Drawing Compliant ■ Processing Per Method 5004/5005 MIL-STD-383 SEEQ's 86063 is a military drawing compliant, 262,144bit 32,768 x 8 , ultraviolet erasable CMOS EPROM. The

SEEQ eprom

Abstract: RT-HE50 2764-25
Contextual Info: 82005 MILITARY DRAWING 64K UV EPROM M ay 1988 Features Description • ■ 82005 Military Drawing Compliant ■ ■ 21-Volt Programming ■ ■ ■ ■ 200 ns Access Time S E E Q ’s 82005 is a m ilitary draw ing com pliant, 2 1 -volt

Contextual Info: eeeQ M27C256/E27C256 256K CMOS EPROM November 1989 Pin Configuration Features m 256K 32K x 8 CMOS EPROM DUAL-IN-LINE • Military and Extended Temperature Range 1 28 b vCc A12 L 2 27 b A14 v pp • -55°C to +125°C: M27C2S6 • -4 0 °C to +85°C: E27C256

Contextual Info: M2764/M27128 Military Temperature Range E2764/E27128 (Military Temperature Range) 2764/27128 EPROM November 1989 Pin Configuration Features • Military and Extended Temperature Range ■-55°C to +125°C: M2764 • -55° C to +125° C: M27123 . -40° C to +85° C: E2764/E27128

EPROM 27128

Abstract: EPROM M2764 seeq 27128 27128 eprom 27128 EPROM specification mm27128 27128 block diagram seeq 2764 2764 block diagram
Contextual Info: M2764/M27128 Military Temperature Range E2764/E27128 (Military Temperature Range) 2764/27128 EPROM November 1989 Pin Configuration Features • Military and Extended Temperature Range - -5 5 ° C to +125°C: M2764 • S S ° C to +125° C: M27128 • -4 0 ° C to +85° C: E2764/E27128

27C256 rom

Contextual Info: 27C256 256K CMOS EPROM November 1989 Pin Configuration Features 27C256 m 2 5 6 K 3 2K x 8 C M O S E PR O M Ultra Lo w P ow er • 100 \iA Max. Vcc S tandby C urrent • 4 0 m A Max. A ctive C urrent • ■ Vpp 28 S V cc 2 27 J A 14 3 26 J a 13 c 4 25 J

27128 ROM pin configuration

Abstract: pin diagram of ic 2764 2764 block diagram 2764 eprom pin diagram seeq 2764 27128 eprom 2764 ic 2764 IC 27128 27128 EPROM specification
Contextual Info: 2764 64K EPROM 27128 128K EPROM November 1989 Pin Configuration • ■ ■ ■ 2764/27128 vpp c 1 A12 £ 2 a7 1 3 A6 C 4 A5 [ 5 A* C 6 • 21 V Vpp - 2 Minutes for 27128 • 1 Minute for 2764 JEDEC Approved Bytewlde Pin Configuration • 2764 8K x 8 Organization

M27C256-20

Abstract: E27C256-20 BU 6124 FS M27C256a M27C256 E27C256-25
Contextual Info: eeeo M27C256Æ27C256 256K CMOS EPROM November 1989 Pin Configuration Features 256K 32K x 8 CMOS EPROM • Military and Extended Temperature Range • S S ° C to +125° C: M27C256 • -4 0 ° C to +85° C: E27C256 ■ v pp I Au I *13 A. c Programmed Using Intelligent Algorithm

Contextual Info: b3E » • flinE33 00G3T3S 623 BISEE 82025 MILITARY DRAWING 128K UV EPROM Technology, Incorporated SEES TECHNOLOGY INC May 1988 Features Description ■ ■ 82025 Military Drawing Compliant

AOI32

Contextual Info: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max