SEL 510 Search Results

HMI ballast

Abstract: hansmann electronic ballast electronic ballast MITRONIC hansmann sachtler netronic 575 ballast hmi hmi 1200 hmi 1200 BALLAST HMI 575 igniter PE1K2
Contextual Info: Technical Information No. FO 5280 Edition: 02/06 - Metal Halide Lamp subject to change without notice Supersedes: Edition 04/05 Status: valid HMI 1200 W/SEL Product description The OSRAM HMI 1200 W/SEL is a single ended metal halide lamp with outer jacket. Service life has been extended to 1,000

Hansmann

Abstract: hansmann electronic ballast zg 500 pro Gossen HMI 575 HMI ballast* 575 electronic ballast MITRONIC IREM BALLAST 640032 zg 501 ignitor
Contextual Info: Technical Information No. FO 4931 Edition: 02/06 - Metal Halide Lamp subject to change without notice Supersedes: Edition 08/04 Status: valid HMI 575 W/SEL Product description d The OSRAM HMI 575 W/SEL is a single ended metal halide lamp with outer jacket. Service life has been extended to 1,000

Contextual Info: * SY10E157 SY100E157 QUAD 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR FEATURES • ■ Individual select controls DESCRIPTION The SY10/100E157 contain four 2:1 m ultiplexers with differential outputs. The output data are controlled by the individual Select SEL inputs. The individual select

Contextual Info: * SY10E157 SY100E157 QUAD 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR FEATURES • ■ Individual select controls DESCRIPTION The SY10/100E157 contain four 2:1 m ultiplexers with differential outputs. The output data are controlled by the individual Select SEL inputs. The individual select

Contextual Info: * SY10E157 SY100E157 QUAD 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR FEATURES • ■ Individual select controls DESCRIPTION The SY10/100E157 contain four 2:1 m ultiplexers with differential outputs. The output data are controlled by the individual Select SEL inputs. The individual select

9240LP

Abstract: 5102ALP AD9240
Contextual Info: PRELIMINARY 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Sel converted to reset See Figure 20 • Low power dissipation: 285 mW • Single 5 V supply

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

1GHz LVDS Oscillator

Abstract: C502A P520-00DC PLL520-00 PLL520-00DC
Contextual Info: PLL520-00 Low Phase Noise VCXO with multipliers for 100-200MHz Fund Xtal FEATURES BLOCK DIAGRAM SEL OE VCON Oscillator XIN XOUT Amplifier w/ integrated varicaps PLL (Phase Locked Loop) Q Q OUTSEL0^ VDD VDD VDD VDD SEL0^ SEL1^ OUTSEL1^ 24 23 22 21 20 19 18

C502A

Abstract: P520-10DC PLL520-10 PLL520-10DC Varicaps Capacitors
Contextual Info: PLL520-10 Low Phase Noise VCXO with multipliers for 65-130MHz Fund Xtal FEATURES BLOCK DIAGRAM SEL OE VCON Oscillator Amplifier w/ X+ integrated varicaps PLL (Phase Locked Loop) OUTSEL0^ VDD VDD VDD VDD SEL0^ SEL1^ OUTSEL1^ 24 23 22 21 20 19 18 17 26 XOUT

Contextual Info: RFFM6904 RFFM6904 3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND LNA Out GND LNA Vcc 31 30 29 28 27 LNA Vref 2 Input Match LNA LNA Sel VRX1 3 24

5962-06237

Abstract: RHF43B RHF43BDIE2V RHF43BK-01V RHF43BK1 5962f0623701vxc 5962F06237
Contextual Info: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output

Contextual Info: M O SEL VTTEUC MS62256H 32K x 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY Features Description • High-speed - 15/20/25/35 ns ■ Low Power dissipation: MS62256HL 1.1W Max. Operating 1mW (Max.) Power down ■ Fully static operation ■ All inputs and outputs directly TTL compatible

RF3858

Abstract: RF3858ISM GaN Bias 25 watt PHEMT* Noise Amplifier with Bypass Switch ant2 0.3 23
Contextual Info: RF3858 RF3858ISM Band Transmit/Receive Module with Diversity Transfer Switch ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND LNA OUT GND LNA VCC 31 30 29 28 27 LNA VREF 2 Input Match LNA SEL 26 VRX2 25 VRX1 3 24 ANT1 RX SWITCH 4 23 ANT2

Contextual Info: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output

5962-06237

Abstract: smd transistor marking PA RHF43B RHF43BDIE2V RHF43BK-01V RHF43BK1
Contextual Info: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output

Contextual Info: RF3858 RF3858ISM Band Transmit/Receive Module with Diversity Transfer Switch ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND LNA OUT GND LNA VCC 31 30 29 28 27 LNA VREF 2 Input Match LNA SEL 26 VRX2 25 VRX1 3 24 ANT1 RX SWITCH 4 23 ANT2

5962F062371VXC

Contextual Info: RHF43B Rad-hard, precision, bipolar, single-operational amplifier Datasheet − production data Features Ceramic Flat-8 • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply

SMD 8PIN IC MARKING CODE 661

Abstract: 5962F0623701VXC
Contextual Info: RHF43B Rad-hard precision bipolar single operational amplifier Features • ■ Rail-to-rail output ■ 8 MHz gain bandwidth at 16 V ■ Ceramic Flat-8 High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under

Contextual Info: RHF484 Rad-hard precision quad operational amplifier Features Ceramic Flat-14W • High radiation immunity: 300 kRad TID at high dose rate ■ ELDRS-free up to 100 krad ■ 300 krad low dose rate on-going ■ SEL immune at LET = 120 MeV.cm²/mg at 125°C ■

PLL502-30DC

Abstract: XTAL 25MHz crystal 26 Mhz package 2 x 6 C502A P502-30DC PLL502-30
Contextual Info: PLL502-30 750kHz – 800MHz Low Phase Noise VCXO for 12 – 25MHz Crystals XIN 26 XOUT 27 SEL3^ 28 SEL2^ 29 OE_CTRL 30 VCON 31 Value Size Reverse side Pad dimensions Thickness 62 x 65 mil GND 80 micron x 80 micron 10 mil SEL XIN XOUT Reference Divider XTAL

CXB1141Q

Abstract: Flip Flops
Contextual Info: CXB1141Q/Q-Y SONY. Hex 2 : 1 Multiplexer with D -FF Description Pin Assignment The CXB1141Q is an ultra high speed monolithic ECU 1C, which contains six 2: 1 multiplexers foll­ owed by D type flip flops. The data select SEL input determines which data is enabled. The selected data

Contextual Info: sony . CXB1141Q Hex 2 : 1 Multiplexer with D-FF Pin Assignm ent Description The CXB1141Q is an ultra high speed monolithic ECL 1C, which contains six 2: 1 multiplexers foll­ owed by D type flip flops. The data select SEL input determines which data is enabled. The selected data

5962F0822201VXC

Abstract: RHF484 18PACKAGE rhf484k rhf484k-01v
Contextual Info: RHF484 Rad-hard precision quad operational amplifier Features Ceramic Flat-14W • High radiation immunity: 300 kRad TID at high dose rate ■ ELDRS-free up to 100 krad ■ 300 krad low dose rate on-going ■ SEL immune at LET = 120 MeV.cm²/mg at 125°C ■

Contextual Info: M O SEL VITELIC V29C51001T/V29C51001B 1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt