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Advantech Co Ltd SQR-SD4I32G2K6SEME 260PIN SODIMM ECC DDR4 2666 32GB
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Advantech Co Ltd SQR-YD4I32G2K6SEME 260PIN RUGGED ECC DDR4 2666 32G
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Advantech Co Ltd SQR-SD4N32G2K6SEME 260PIN SODIMM ECC DDR4 2666 32GB
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DigiKey	SQR-SD4N32G2K6SEME	Bulk			1	1 $206.38 10 $206.38 100 $206.38 1000 $206.38 10000 $206.38	Buy Now
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Advantech Co Ltd SQR-YD4N32G2K6SEME 260PIN RUGGED ECC DDR4 2666 32G
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LEDIL C12292_LENA-STD-BASE-MEZ BASE RND 58.6MM DIA 12.8MM HT WH
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DigiKey	C12292_LENA-STD-BASE-MEZ	Tray			1	1 $2.41 10 $1.572 100 $2.41 1000 $0.92619 10000 $0.80883	Buy Now
Avnet Americas	C12292_LENA-STD-BASE-MEZ	Bag			60	1 - 10 - 100 $0.6675 1000 $0.6175 10000 $0.6175	Buy Now
Mouser Electronics	C12292_LENA-STD-BASE-MEZ					1 $2.27 10 $0.998 100 $0.998 1000 $0.842 10000 $0.8	Get Quote
Newark	C12292_LENA-STD-BASE-MEZ	Bulk			60	1 - 10 - 100 $1.29 1000 $1.04 10000 $1.04	Buy Now
Avnet Silica	C12292_LENA-STD-BASE-MEZ			7 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	C12292_LENA-STD-BASE-MEZ			7 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Maritex	C12292_LENA-STD-BASE-MEZ		20			1 $0.893 10 $0.849 100 $0.803 1000 $0.714 10000 $0.714	Buy Now

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SEME Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
1N3893	Semelab	Dual Fast Recovery Rectifier in a TO259 Hermetic Package	Original	PDF
1N4001CSM	Semelab	1.0A Iout, 50V Vrrm General Purpose Silicon Rectifier	Scan	PDF
1N4001CSM4	Semelab	GENERAL PURPOSE SILICON RECTIFIER DIODE	Original	PDF
1N4003CSM	Semelab	GENERAL PURPOSE SILICON RECTIFIER DIODE	Original	PDF
1N4003CSM	Semelab	750mA Iout, 200V Vrrm General Purpose Silicon Rectifier	Scan	PDF
1N4003CSM4	Semelab	GENERAL PURPOSE SILICON RECTIFIER DIODE	Original	PDF
1N4106CSM	Semelab	Zener Diode in a Ceramic Surface Mount Package for HI-REL Applications	Original	PDF
1N4148CSM	Semelab	SILICON EPITAXIAL PLANAR DIODE	Original	PDF
1N4149CSM	Semelab	SILICON EPITAXIAL PLANAR DIODE	Original	PDF
1N4621CSM	Semelab	Zener Diode in a Ceramic Surface Mount Package for HI-REL Applications	Original	PDF
1N4626CSM	Semelab	Zener Diode in a Ceramic Surface Mount Package for HI-REL Applications	Original	PDF
1N5221	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	Original	PDF
1N5221B-LCC3	Semelab	Zener Voltage Regulator Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications	Original	PDF
1N5222	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	Original	PDF

1N5222B-LCC3	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICA	Original	PDF
1N5223	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	Original	PDF
1N5223B-LCC3	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICA	Original	PDF
1N5224	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	Original	PDF
1N5224B-LCC3	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICA	Original	PDF
1N5225	Semelab	ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	Original	PDF

...

SEME Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D1284 Abstract: No abstract text available Text: TetraFET D1284UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 12V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52	Original	PDF	D1284UK 200MHz D1284
common anode schottky to220 Abstract: Schottky diode TO220 common cathode to220 Schottky com anode TO220 SB30 40RM SCHOTTKY 20A 40V SB30-40AM SB30-40M SB30-40RM Text: SB30-45M SB30-45AM SB30-45RM SEME LAB SB30-40M SB30-40AM SB30-40RM MECHANICAL DATA Dimensions in mm 4.6 1 0.6 DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL PACKAGE	Original	PDF	SB30-45M SB30-45AM SB30-45RM SB30-40M SB30-40AM SB30-40RM common anode schottky to220 Schottky diode TO220 common cathode to220 Schottky com anode TO220 SB30 40RM SCHOTTKY 20A 40V SB30-40AM SB30-40M SB30-40RM
EM 1455 A Abstract: TL 2N2222A npn transistor 2N2222A 2N2907A HCT700 Text: SEME HCT700 LAB MECHANICAL DATA Dimensions in mm inches COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS LCC2 – Ceramic Surface Mount Package FEATURES 2 3 1 4 A 6 0.23 rad. (0.009)	Original	PDF	HCT700 100MHz 100kHz 150mA 300ms, EM 1455 A TL 2N2222A npn transistor 2N2222A 2N2907A HCT700
2N5664SMD Abstract: No abstract text available Text: SEME 2N5664SMD LAB MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . FEATURES ! • HIGH VOLTAGE 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )	Original	PDF	2N5664SMD 10MHz 2N5664SMD
SMRF1001 Abstract: No abstract text available Text: TetraFET SEME SMRF1001 LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH – PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE COMMON PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE2	Original	PDF	SMRF1001 500MHz 01VGS SMRF1001
SJ5439 Abstract: No abstract text available Text: SEME SJ5439 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) NPN DRIVER	Original	PDF	SJ5439 10MHz SJ5439
fast switching pnp transistor 3A 60V Abstract: SJ5438 TO63 package Text: SEME SJ5438 LAB MECHANICAL DATA Dimensions in mm inches PNP DRIVER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) 3.68	Original	PDF	SJ5438 fast switching pnp transistor 3A 60V SJ5438 TO63 package
IP78M12ADP Abstract: IP78M12DP IP78M12DPA Text: IP78M12ADP IP78M12DPA SEME LAB MECHANICAL DATA 3 TERMINAL LOW CURRENT 12 VOLT POSITIVE VOLTAGE REGULATOR Dimensions in mm inches 6.35 (0.250) 5.33 (0.210) 2.29 (0.090) 0.89 (0.035) 2 pls. 3 7˚ ± 1˚ 7˚ ± 1˚ 1.14 (0.045) 0.64 4.32 (0.170) (0.025) 2 • 0.01%/V LINE REGULATION	Original	PDF	IP78M12ADP IP78M12DPA 100kHz IP78M12DP IP78M12ADP IP78M12DP IP78M12DPA
Untitled Abstract: No abstract text available Text: SEME IRFN240 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A Ω 0.180Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF	Original	PDF	IRFN240 220SM 300ms,
infra red sensors Abstract: Aspheric Lens TO Can bandpass filter PLC biconvex lens Text: SYSTEMS DIVISION PLASTIC OPTICAL COMPONENTS IMAGING AND NON-IMAGING PLASTIC OPTICAL COMPONENTS DESCRIPTION FEATURES: Due to customer requests Semelab has developed the capability to design and supply polymer based optical components. These devices can be used to complement the	Original	PDF
BC477A Abstract: 150M Text: BC477A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products	Original	PDF	BC477A O206AA) 2-Aug-02 BC477A 150M
BSX52A Abstract: No abstract text available Text: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products	Original	PDF	BSX52A O206AA) 2-Aug-02 BSX52A
CV7477 Abstract: No abstract text available Text: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products	Original	PDF	CV7477 O206AA) 2-Aug-02 CV7477
CV10806 Abstract: No abstract text available Text: CV10806 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products	Original	PDF	CV10806 O206AA) 2-Aug-02 CV10806

Untitled Abstract: No abstract text available Text: m o le x SEMES 66 BEAU Terminal Blocks .500" PCB Tri-Barrier Terminal Strip, 600V Description Features The series 66, PCB tri-barrier terminal strip is today, the only 600 volt, 45 Amp UL and CSA rated terminal block for printed circuit board mounting. The terminal block provides an	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—	OCR Scan	PDF	IRF450 300ms,
BUP36 Abstract: D00D1 LE17 5018 Text: SEMELAB LTD 37E J> 3133107 GDODIMD SEMELAB SILICON NPN EPITAXIAL PLANAR 2h- u FEATURES —Ì a 21 X mai 12.7 max. • High breakdown voltage • W ide area of secondary breakdown • Very fast switching • High reliability j t “ 1.6 SOT-93 ABSOLUTE MAXIMUM RATINGS AT 25°C	OCR Scan	PDF	D00D14D BUP36 OT-93 BUP36 D00D1 LE17 5018
Sot-220 Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100 Text: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L\|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION	OCR Scan	PDF	B1331Ã GQ001SS 55to150Â BUP42 Sot-220 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
BUP34 Abstract: LE17 900Volts Text: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob	OCR Scan	PDF	G00013M BUP34 O-220 100Voltsf 33-oi LE17 900Volts
BUP39 Abstract: 0121 LE17 t387 Text: SEMELAB LTD 37E D • Ô1331Ô7 00QQ14b & ■ SMLB _ V SEMELAB SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR FEATURES • High breakdown voltage • Wide area of secondary breakdown • Very fast switching • High reliability SOT-93 ABSOLUTE MAXIMUM RATINGS AT 25°C	OCR Scan	PDF	t-387 BUP39 SCfT-93 BUP39 0121 LE17 t387
BUP38 Abstract: LE17 Text: - SEMELAB 37E LTD Û1331Û7 D Q0QQ14M ISMLB •1 S E M E LA B JUN 2 6 1987 4 'S m g - i , 4Î T - 3 3-13 -• 1 BUP38 SILICO N N P N MECHANICAL DATA EPITAXIAL PLANAR FEATURES =j—r T 12.7 21 • High breakdown voltage imi • Wide area of secondary breakdown	OCR Scan	PDF	BUP38 OT-93 fll331fl7 BUP38 LE17
BUZ50A Abstract: BUZ50B LE17 Diodi IR 50A-220M Text: 3 7E SEMELAB LTD D 0133107 OOODEST T • SMLB ' DEC 3 1 1987 <2A^ SEMELAB BUZ 50A -220M BUZ 50B -220M NEW PRODUCT MOS POWER N -C H A N N E L ENHANCEMENT MODE TO 220 METAL MECHANICAL DATA Dimensionsin mm FEATURES • HERMETIC TO 220 METAL PACKAGE T t <5- • HIGH RELIABILTY	OCR Scan	PDF	0A-220M 50B-220M T0220M. T-39-11 BUZ50A BUZ50B BUZ50B LE17 Diodi IR 50A-220M
MC1010 Abstract: MC10514 MC10515 C101 MC10102 MC10103 MC10105 MC10106 MC1011 MC10110 Text: MECL 10.000 semes INTEGRATED CIRCUITS FROM MOTOROLA M C10,100/10,200 Series -30 to +85°C WIC10,500/10,600 Series (-55 to +125°C) C ircu it design w ith M E C L 1 0 ,0 0 0 is u nusually co n venient. The differential am plifier in p ut and emitterfollow er ou tp u t perm it high fanout, the w ired-O R option,	OCR Scan	PDF	Time-120% MC1010 MC10514 MC10515 C101 MC10102 MC10103 MC10105 MC10106 MC1011 MC10110
MC10100 Abstract: C101 MC10102 MC10103 MC10105 MC10106 MC1011 MC10110 MC10114 MC10115 Text: MECL 10.000 semes INTEGRATED CIRCUITS FROM MOTOROLA MC10,100/10,200 Series -30 to +85°C WIC10,500/10,600 Series (-55 to +125°C) C irc u it design w ith M E C L 1 0 ,0 0 0 is u nusually con venient. The d iffe re n tia l a m p lifie r in p u t and e m itte rfo llo w e r o u tp u t p e rm it high fa n o u t, th e w ired-O R o p tio n ,	OCR Scan	PDF

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Advantech Co Ltd SQR-SD4I32G2K6SEME

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LEDIL C12292_LENA-STD-BASE-MEZ

SEME Datasheets (500)

SEME Datasheets Context Search

D1284

common anode schottky to220

EM 1455 A

2N5664SMD

SMRF1001

SJ5439

fast switching pnp transistor 3A 60V

IP78M12ADP

Untitled

infra red sensors

BC477A

BSX52A

CV7477

CV10806

Untitled

Untitled

BUP36

Sot-220

BUP34

BUP39

BUP38

BUZ50A

MC1010

MC10100