skm 152 ga
Abstract: Semitrans M SKD 100 GAL semikron skt 40/12 semikron skkt 15/12 semikron 14 MD skm 200 gb 122 d semikron skm 152 ga semikron skkd 15/12 SKN 170 semikron skkt 132/ 14/ E
Text: SEMIBOX Standard Packing Units Component Types Standard Packing Unit Content Box Dimensions Weight compo- accesnents sories 1 mm x mm x mm kg 1. SEMIPACK Thyristor/Diode Modules SEMIPACK 0 SEMIPACK 1 SEMIPACK 2 SEMIPACK 3 SEMIPACK 4 SEMIPACK 5 SKKD 15; SKKE 15; SKKH 15;
|
Original
|
PDF
|
|
SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 75 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 360 800 / 720 ± 20 2750 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A
|
Original
|
PDF
|
|
GAL063D
Abstract: NPT-IGBT SKM GAL -700 -4
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 400 / 300 450 / 450 ± 20 1350 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms
|
Original
|
PDF
|
|
bi-directional switches IGBT
Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 220 / 150 440 / 300 ± 20 1250 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms
|
Original
|
PDF
|
|
Semikron SKM
Abstract: GAL 200 gb
Text: SKM 145 GB 174 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
|
Original
|
PDF
|
3K7/IE32
Semikron SKM
GAL 200 gb
|
skm195gal
Abstract: SEMIKRON book
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 290 / 200 580 / 400 ± 20 1250 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C
|
Original
|
PDF
|
|
RU diode
Abstract: 128D
Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 600 / 400
|
Original
|
PDF
|
|
|
skm 50 gb 100 d
Abstract: No abstract text available
Text: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 800 GA 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKM 400 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
|
Original
|
PDF
|
T\datbl\B06-ig
bt\400
gb126d
|
RR3020
Abstract: ga128d
Text: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
|
Original
|
PDF
|
|
F120A
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 200 / 145 400 / 290 ± 20 700 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C
|
Original
|
PDF
|
|
semibox
Abstract: 32020200 M6x12 31949100 M6X20 32711300 122d 31947300 SEMIKRON book
Text: SEMITRANS IGBT Modules Packaging, ESO Protection and Mounting Hardware The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD . They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
|
OCR Scan
|
PDF
|
|
skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms
|
OCR Scan
|
PDF
|
123D1
skm 152 ga 123
semikron skm 152 ga 123
semikron skm 152 ga
skm 200 IGBT 600V 200A
skm 22 gal 123
SKM 200 GB 102 D
SKM 300 CIRCUIT
1502C
M200G812
CASED56
|
Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
|
OCR Scan
|
PDF
|
|
100GB06
Abstract: No abstract text available
Text: s e M IK R O N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges T oase = 25/70 °C Ptot per IG B T , T oase = 25 °C Units 600 600 1 3 0 /1 0 0 260 / 200 ±20 450 - 4 0 . +150 125) 2500 Class F 40/125/56 Rge = 20 Tease = 25/70 °C; tp = 1 ms
|
OCR Scan
|
PDF
|
|