SEMICONDUCTOR BODY MARKING Search Results

BYT40Y

Contextual Info: BYT 40 Y VISHAY 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak Mechanical Data_

202 sod57

Abstract: DS30034 NI 4001
Contextual Info: SF4001 - SF4007 1.0A ULTRA-FAST RECOVERY GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • • Hermetically Sealed Glass Body Construction Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current A A B C

Contextual Info: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A A B C Mechanical Data • • • • • D Case: DOT-30B, Glass

3040P

Abstract: 3040pt mbr3050pt-mbr3060pt 3035PT 3050PT 3060PT 2923 MARKING
Contextual Info: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number

3060PT

Abstract: 3035PT 3045P 2923 MARKING
Contextual Info: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number

Contextual Info: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model E B ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. D H ・High-speed line driver.

MBR3060PTG

Contextual Info: SENSITRON MBR3030PT - G -MBR3060PT-G SEMICONDUCTOR Green Products Technical Data Data Sheet 3491, Rev.- MBR3030PT-G-MBR3060PT-G 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

FDMS2508SDC

Abstract: a2232
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

FDMC2512SDC

Contextual Info: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMS2502SDC

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

MO-240

Abstract: 10dc rectifier
Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

MO-240

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have