SEMICONDUCTOR BODY MARKING DK Search Results

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

Contextual Info: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)

Contextual Info: 30 V, 48 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI03062 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31 A)

Contextual Info: 30 V, 48 A, 3.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI03038 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.2 mΩ max. (VGS = 10 V, ID = 47.2 A)

Contextual Info: 100 V, 28 A, 20.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10299 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 28 A  RDS(ON) - 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)

Contextual Info: 40 V, 29 A, 9.5 mΩ Low RDS ON N ch Trench Power MOSFET DKI04103 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 11.8 mΩ max. (VGS = 10 V, ID = 18.8 A)

Contextual Info: 30 V, 29 A, 7.1 mΩ Low RDS ON N ch Trench Power MOSFET DKI03082 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 8.8 mΩ max. (VGS = 10 V, ID = 25 A)

Contextual Info: 40 V, 47 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET DKI04077 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)

Contextual Info: 60 V, 25 A, 16.7 mΩ Low RDS ON N ch Trench Power MOSFET DKI06261 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 25 A  RDS(ON) - 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A)

Contextual Info: 60 V, 31 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET DKI06186 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 31 A  RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)

Contextual Info: 100 V, 19 A, 34.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10526 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 19 A  RDS(ON) - 54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)

Contextual Info: 40 V, 48 A, 4.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04046 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 5.6 mΩ max. (VGS = 10 V, ID = 35.4 A)

Contextual Info: 100 V, 15 A, 50.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10751 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 15 A  RDS(ON) - 72.6mΩ max. (VGS = 10 V, ID = 7.5 A)

Contextual Info: 40 V, 48 A, 3.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04035 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.3 mΩ max. (VGS = 10 V, ID = 51 A)

Contextual Info: 40 V, 48 A, 3.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04035 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.3 mΩ max. (VGS = 10 V, ID = 51 A)

Contextual Info: 100 V, 28 A, 20.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10299 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 28 A  RDS(ON) - 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)

Contextual Info: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)

Contextual Info: 30 V, 48 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI03062 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31 A)

Contextual Info: 100 V, 19 A, 34.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10526 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 19 A  RDS(ON) - 54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)

ON Semiconductor marking

Abstract: Wafer Fab Plant Codes ST 051 MPC V = Device Code T138A
Contextual Info: MC74VHC1G50 Product Preview Buffer The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: 40 V, 47 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET DKI04077 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)

Contextual Info: 30 V, 29 A, 7.1 mΩ Low RDS ON N ch Trench Power MOSFET DKI03082 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 8.8 mΩ max. (VGS = 10 V, ID = 25 A)