SEMICONDUCTOR BODY MARKING DK Search Results

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

Contextual Info: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)

Contextual Info: 30 V, 48 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI03062 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31 A)

Contextual Info: 30 V, 48 A, 3.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI03038 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.2 mΩ max. (VGS = 10 V, ID = 47.2 A)

Contextual Info: 100 V, 28 A, 20.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10299 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 28 A  RDS(ON) - 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)

Contextual Info: 40 V, 29 A, 9.5 mΩ Low RDS ON N ch Trench Power MOSFET DKI04103 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 11.8 mΩ max. (VGS = 10 V, ID = 18.8 A)

Contextual Info: 30 V, 29 A, 7.1 mΩ Low RDS ON N ch Trench Power MOSFET DKI03082 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 8.8 mΩ max. (VGS = 10 V, ID = 25 A)

Contextual Info: 40 V, 47 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET DKI04077 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)

Contextual Info: 60 V, 25 A, 16.7 mΩ Low RDS ON N ch Trench Power MOSFET DKI06261 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 25 A  RDS(ON) - 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A)

Contextual Info: 60 V, 31 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET DKI06186 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 31 A  RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)

Contextual Info: 100 V, 19 A, 34.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10526 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 19 A  RDS(ON) - 54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)

Contextual Info: 40 V, 48 A, 4.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04046 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 5.6 mΩ max. (VGS = 10 V, ID = 35.4 A)

Contextual Info: 100 V, 15 A, 50.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10751 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 15 A  RDS(ON) - 72.6mΩ max. (VGS = 10 V, ID = 7.5 A)

Contextual Info: 40 V, 48 A, 3.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04035 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.3 mΩ max. (VGS = 10 V, ID = 51 A)

ON Semiconductor marking

Abstract: Wafer Fab Plant Codes ST 051 MPC V = Device Code T138A
Contextual Info: MC74VHC1G50 Product Preview Buffer The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Contextual Info: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

wz 74 marking

Abstract: t138a V = Device Code
Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

marking t132

Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

vsop8 package outline

Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Contextual Info: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.