SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, 2013 Search Results

bzx85c10

Abstract: .MODEL BZX85C6V8
Contextual Info: Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. TAK CHEONG 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Units Maximum Steady State Power Dissipation

Contextual Info: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 5 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3

SA3410GEVK

Abstract: stereo audio preamplifier bluetooth RF transceiver SA3410GEVB MAX RF transceiver Fingerprint module SA3291 bluetooth rf cmos transceiver circuit diagram of digital hearing aid dsp hearing aid
Contextual Info: AYRE SA3291 Pre-configured Wireless DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 3 1 http://onsemi.com 32 PAD HYBRID CASE TBD PAD CONNECTION 20 1 VIN1 N/C GND VIN2 2 TIN N/C MGND 3 VREG 4 VC

Contextual Info: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 3 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3 GND

SA3400

Abstract: circuit diagram of digital hearing aid Hearing Aid Circuit Diagram Hearing aids dsp hearing aid circuit hearing instrument WDRC DSP digital hearing aid design
Contextual Info: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 2 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3 GND

Contextual Info: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment

Contextual Info: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment

Contextual Info: BD159 Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment

Contextual Info: DBA100G 10.0A Single-Phase Bridge Rectifier http://onsemi.com → x × → → → → Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

je350g

Contextual Info: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

JE350

Contextual Info: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

JE350

Contextual Info: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

Contextual Info: Ordering number : EN2772C DBB08 0.8A Single-Phase Bridge Rectifier http://onsemi.com Features • • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. Glass passivation for high reliability. Specifications

Contextual Info: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:

SOT-95

Abstract: NL17SG86
Contextual Info: NL17SG86 Single 2-Input XOR Gate The NL17SG86 MiniGatet is an advanced high−speed CMOS 2−State XOR gate in ultra−small footprint. The NL17SG86 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V

NL17SG00P5T5G

Contextual Info: NL17SG00 Single 2-Input NAND Gate The NL17SG00 MiniGatet is an advanced high−speed CMOS 2−input NAND gate in ultra−small footprint. The NL17SG00 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •

Contextual Info: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •

Contextual Info: NL17SG08 Single 2-Input AND Gate The NL17SG08 MiniGatet is an advanced high−speed CMOS 2−input AND gate in ultra−small footprint. The NL17SG08 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •

Contextual Info: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •

NL17SG32P5T5G

Contextual Info: NL17SG32 Single 2-Input OR Gate The NL17SG32 MiniGatet is an advanced high−speed CMOS 2−input OR gate in ultra−small footprint. The NL17SG32 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • •

Contextual Info: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •

Contextual Info: NL17SGU04 Unbuffered Inverter The NL17SGU04 MiniGatet is an advanced high−speed CMOS unbuffered inverter in ultra−small footprint. The NL17SGU04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •

Contextual Info: NL17SG34 Single Buffer The NL17SG34 MiniGatet is an advanced high−speed CMOS Buffer in ultra−small footprint. The NL17SG34 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V

Contextual Info: NL17SG02 Single 2-Input NOR Gate The NL17SG02 MiniGatet is an advanced high−speed CMOS 2−input NOR gate in ultra−small footprint. The NL17SG02 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •