SEMIKRON SKIIP 3 GB 120 Search Results

gb120-315

Contextual Info: SEMIKRON SKiiP 632 GB 120 • 315 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode V ces V cc 9> O perating DC link voltage lc T h e a t s in k T j 3> IG B T = 25 °C & Diode V is o l 4> AC, 1 mln. If T h e a t s in k

SKIIP 32 nab 12 t 49

Abstract: SKiiP 83 AC 12 i t 1 skiip 31 nab 12 t 49 semikron skiip 32 nab 12 Semikron skiip 31 nab 12 semikron skiip 20 nab 12 I T 38 semikron skiip 24 nab 125 t 12 Semikron skiip 22 nab SEMIKRON SKIIP 20 NAB 12 T 17 Semikron skiip 22 neb 063
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technologie • Druckkontaktverbindungen aller Leistungs- und Steueranschlüsse statt gelöteter Kontaktierungen. ■ Integration neuester Chiptechnologie • schaltverlustarme, 600V oder 1200V, homogene NPT IGBTs mit antiparalleler

SKIIP 32 nab 12 t 49

Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel

SKiiP 613 GB

Contextual Info: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.

skiip gb 120

Contextual Info: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces

SKIIP 602 GB 120 301 FT

Contextual Info: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

Contextual Info: s e MIKRD n SKiiP 912 GB 120 - 303 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 900 1800 - 5 5 . . . + 150 3000 5 740 1800 6480 210 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ).+ 85(70) V V kV/|iS °C |Conditions 1) IGBT & Inve rse Diode V ces

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

semikron skiip 792

Contextual Info: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode

semikron skiip 1212 GB 120

Contextual Info: s e M IK R O n SKiiP 1212 GB 120 - 402 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 1200 2400 - 5 5 . . . + 150 3000 5 990 2400 8600 374 V V A A °C V A A A kA2s 18 30 75 - 25 0 ) . .+ 85(70) V V kV/|is °C | Conditions1> IGBT & Inve rse Diode

skiip gb 120

Abstract: semikron skiip 1212 GB 120 semikron skiip 09 semikron 100 gb 06 skiip gd 120 semikron IGBT skiip 602 semikron skiip 400 gb SKIIP GD semikron skiip 3 gb 120 skiip 31 ac 12
Contextual Info: Section 7: SKilPPACK 4 Large IGBT Power Packs SKiiPPACK = SEMIKRON integrated intelligent Power Pack Type ® Options; W. Vces control connection W = wire F = fibre optic T a Temp.sense Pi«0 VcEsit @> TRISTO @ Ic 25 °C =25°C @ Tamb = 35 °C typ./c#iip

Contextual Info: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101

SKiiP 613 GB

Contextual Info: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

SKiiP 613 GB

Contextual Info: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

Contextual Info: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces

diode M7

Abstract: m7 diode SEMIKRON SKIIP 72 GB 12 m7 diode power semikron skiip 3 gb 120 skiip gb 120 semikron skiip 09 125 semikron skiip 09 skiip 72 gb 120 semikron 100 gb 06
Contextual Info: SKiiP 72 GB 12 Absolute Maximum Ratings Symbol VCES VGES IC ICM Conditions 1 Values 1200 ± 20 95 / 65 190 / 130 Units V V A A 80 / 53 160 / 106 2500 – 40 . . . + 150 – 40 . . . + 125 A A V~ °C °C Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C; tp = 1 ms

Contextual Info: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C

Contextual Info: 5EMIKRON Sym bol C o n d itio n s 1> Viso, 4 AC, 1min o— I Ü —I /> Q SKiiP 602 GB 061 - 255 CTV Absolute Maximum Ratings Operating / stor. temperature SKiiPPACK Values Units 2500 V -25.+85 °C 600 400 600 -40.+150 600 1200 6000 180 V V A °C A A

Contextual Info: Ô13bb71 00GSQ32 2S7 SKiiPPACK S K integrated intelligent Power P A CK 3-phase bridge with brake chopper SKiiP 202 G D L 120 + Driver 404 WT E/U 3) SKiiP 202 GDL 120 - 404 WT (E/U) Driver for 3-phase bridge and brake chopper Absolute Maximum Ratings 3-phase

Diode LT 404

Contextual Info: s e M IK R D n SKiiP 312 GDL 120 - 404 WT E/U Absolute Maximum Ratings Symbol | Conditions Values Units 1200 - 5 5 . . . + 150 V V A A °C 3 0 0 0 5) V 240 A A A kA2s 11 IGBT & Invcsrse Diode Vces Operating DC link voltage Vc c 10) Theatsink — 2 5 °C

CALCULATION SemiSel 3.1

Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Contextual Info: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2