SEMITRANS Search Results
SEMITRANS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SKM400GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
Original |
SKM400GAL12T4 | |
Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
Original |
SKM200GAL12E4 | |
Contextual Info: SKM 300GB124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 ? % SEMITRANSTM 3 Low Loss IGBT Modules SKM 300GB124D , 5 13 C AC ? 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications |
Original |
300GB124D | |
Contextual Info: SKM 300GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %67 9 ;" 1 3 SEMITRANSTM 3 SPT IGBT Module SKM 300GB128D - 12*3 . / <6&%<= > Typical Applications & ' ' )* |
Original |
300GB128D 300GAL128D | |
Contextual Info: SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $19 6:2 #< (, 6 SEMITRANSTM 2N Ultra Fast IGBT Module SKM 100GB125DN !9 3 *+ E BE (< 3 *4+ 5$ Characteristics Symbol Conditions IGBT 6$2), Typical Applications |
Original |
100GB125DN | |
Contextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT & & &<A : 5# TM SEMITRANS 2 Trench IGBT Modules SKM 195GB066D Preliminary Data Features !! |
Original |
195GB066D | |
Contextual Info: SKM 200GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )<= (' 0@ ( SEMITRANSTM 3 Superfast NPT-IGBT Modules SKM 200GB063D Features |
Original |
200GB063D | |
Contextual Info: SKM 100GB173D Absolute Maximum Ratings Symbol Conditions IGBT &6 & &9: ;6 3%= *3 SEMITRANSTM 2 IGBT Modules SKM 100GB173D #: 4 +, B /B 3= 4 +0, 5& Characteristics Symbol Conditions IGBT &6*- Typical Applications '& % |
Original |
100GB173D | |
Contextual Info: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A |
Original |
SKM600GA12E4 CA009 | |
Contextual Info: SKM 22GD123D Absolute Maximum Ratings Symbol Conditions IGBT *; &* &*? 2; .A . SEMITRANSTM 6 IGBT Modules SKM 22GD123D Features |
Original |
22GD123D | |
Contextual Info: SKM 200GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %56 7 9" 1 3 SEMITRANSTM 3 SPT IGBT Module SKM 200GB128D Features !" |
Original |
200GB128D | |
Contextual Info: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications |
Original |
400GA124D | |
j 6810
Abstract: nuclear radiation detector 6810-A RCA photomultiplier j 6810a J 6810 D 20000 watt schematics power amp RCA photomultiplier 6810 21100 6810
|
OCR Scan |
810-A 20-Pin RCA-68I0-A 810-A j 6810 nuclear radiation detector 6810-A RCA photomultiplier j 6810a J 6810 D 20000 watt schematics power amp RCA photomultiplier 6810 21100 6810 | |
Contextual Info: SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 222 A Tc = 80 °C 169 A 150 A ICnom ICRM SEMITRANS 3 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 450 A -20 . 20 |
Original |
SKM150GB12VG SKM150GB12VG E63532 | |
|
|||
145GB063DNContextual Info: SKM 145GB063DN Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,A ( SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 145GB063DN SKM 145GAL063DN Features |
Original |
145GB063DN 145GB063DN 145GAL063DN | |
Contextual Info: SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 81 A Tc = 80 °C 62 A 50 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SKM50GAL12T4 | |
Contextual Info: SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440 |
Original |
SKM400GAL12E4 | |
SCT 2A
Abstract: 500GA
|
Original |
500GA174D SCT 2A 500GA | |
SKM145GB128DNContextual Info: SKM 145GB128DN Absolute Maximum Ratings Symbol Conditions IGBT ' '78 9 ";$ SEMITRANSTM 2N SPT IGBT Module ,01$ ! ,0 4- 1 ,0 4- 1$ ! 2 <7 '<= > ($ 2 @ Values Units 2,-250 26- |
Original |
145GB128DN SKM145GB128DN | |
Contextual Info: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT % % %:A 8 3" TM SEMITRANS 3 Trench IGBT Modules SKM 300GB066D Preliminary Data Features |
Original |
300GB066D | |
diode 1233Contextual Info: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications |
Original |
400GA124D diode 1233 | |
Contextual Info: SKM 800GA176D Absolute Maximum Ratings Symbol Conditions IGBT # #89 : < + SEMITRANSTM 4 Trench IGBT Modules SKM 800GA176D Preliminary Data Features |
Original |
800GA176D | |
SemikContextual Info: SKM 100GD063DL . Absolute Maximum Ratings Symbol Conditions IGBT 9: !<& $ SEMITRANSTM 6 Superfast NPT-IGBT Module SKM 100GD063DL Features ! "" #$%& $" |
Original |
100GD063DL Semik | |
Contextual Info: SKM 50GB063D Absolute Maximum Ratings Symbol Conditions IGBT &$' $ $67 &' +; 3 5 & SEMITRANSTM 2 Superfast NPT-IGBT Modules SKM 50GB063D Features ! " # $ |
Original |
50GB063D |