SEMIX IGBT GAL Search Results

30g 122 igbt

Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
Contextual Info: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3

PCIM 176

Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100
Contextual Info: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3

B43875

Abstract: 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125
Contextual Info: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 100F B6U+B6CI+E1CIF 80 V12 SEMiX 352 GB 128 SEMiX 302 GAL 126 SKD 145/16 P122 / 550 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb

KG3B-35-5

Abstract: semix igbt GAL semix type Designation System KG3B semix igbt modules bridge MKT .01 R 46 MKP SEMIKRON type designation wacker KG3B-35
Contextual Info: Modules – Explanations – SEMiX SEMiX IGBT Modules Forward characteristic with minimised temperature coefficient • Features • New module platform for optimum connection between driver and intermediate circuit • Based on well-tried SEMIKRON module technologies

Contextual Info: SEMiX 603GB066HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  -  '  $ -  &:( ) $#!   '()6

Contextual Info: SEMiX 402GB066HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  -  '  $ -  &5( ) $#!   '()2

Contextual Info: SEMiX 352GB128Ds power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 167   '+,-

Contextual Info: SEMiX 703GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 167   ()*-

Contextual Info: SEMiX 452GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 167   ()*-

Contextual Info: SEMiX 553GB128Ds power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 156   '+,-

SEMiX453GAL12E4s

Contextual Info: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

diode B05

Abstract: 4a8 diode diode e4e
Contextual Info: SEMiX 653GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter   -. /0       # Absolute Maximum Ratings Symbol Conditions IGBT 

SEMiX604GAL12E4S

Abstract: C529A SEMIX604GA
Contextual Info: SEMiX604GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX604GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V

Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

VF-0240

Contextual Info: SEMiX352GAL128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 377 A Tc = 80 °C 268 A 200 A ICnom ICRM SEMiX 2s SPT IGBT Modules SEMiX352GAL128Ds VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V

SEMIX402GAL

Contextual Info: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V

Contextual Info: SEMiX653GAL176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GAL176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V

igbt

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C