SEMIX453GB12T4S Search Results
SEMIX453GB12T4S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SEMIX453GB12T4S |
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Trench IGBT Modules | Original | 1.23MB | 5 |
SEMIX453GB12T4S Price and Stock
SEMIKRON SEMIX453GB12T4SSEMIX 3S TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX453GB12T4S | 3 |
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SEMIX453GB12T4S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX453GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 544 A Tc = 80 °C 407 A 1350 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX453GB12T4s E63532 Ty3GB12T4s | |
Contextual Info: SEMiX453GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s tpsc Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX453GB12T4s E63532 | |
Contextual Info: SEMiX453GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 683 A Tc = 80°C 526 A 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 544 A Tc = 80°C 407 A 1350 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX453GB12T4s | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |