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    SENSOR TCST1030 Search Results

    SENSOR TCST1030 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS581P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SD-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS791B Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SK-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    SENSOR TCST1030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCPT1300

    Abstract: CE marking code
    Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E 21835 D Top view 19158_1 DESCRIPTION The CNY70 is a reflective sensor that includes an infrared


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    PDF CNY70 CNY70 2002/95/EC 2002/96/EC 11-Mar-11 TCPT1300 CE marking code

    CNY70

    Abstract: tcrt500 TCST1030L CE marking code
    Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E 21835 D Top view 19158_1 DESCRIPTION The CNY70 is a reflective sensor that includes an infrared


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    PDF CNY70 CNY70 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 tcrt500 TCST1030L CE marking code

    Telefunken Phototransistor

    Abstract: TCST1030 all phototransistor 20 PIN IC TEMIC
    Text: TCST1030 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025 17-Jun-96 Telefunken Phototransistor TCST1030 all phototransistor 20 PIN IC TEMIC

    Untitled

    Abstract: No abstract text available
    Text: TCST1030 L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description The TCST1030 and TCST1030L are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light.


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    PDF TCST1030 TCST1030L 18-Jul-08

    TCST1030

    Abstract: TCST1030L
    Text: TCST1030 L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description The TCST1030 and TCST1030L are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light.


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    PDF TCST1030 TCST1030L 2002/95/EC 2002/96/EC 08-Apr-05

    Telefunken Phototransistor

    Abstract: TCST1030 TCST1030L
    Text: TCST1030 L Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025 10-Dec-97 Telefunken Phototransistor TCST1030L

    Transmissive Optical Sensors

    Abstract: sensor tcst1030 TCST1030 TCST1030L Optical encoder Sensor
    Text: TCST1030, TCST1030L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 • Aperture: none


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    PDF TCST1030, TCST1030L TCST1030 TCST1030L 2002/95/EC 2002/96/EC 18-Jul-08 Transmissive Optical Sensors sensor tcst1030 Optical encoder Sensor

    TCST1030

    Abstract: TCST1030L S9070
    Text: TCST1030, TCST1030L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none


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    PDF TCST1030, TCST1030L TCST1030 TCST1030L 2002/95/EC 2002/96lectual 18-Jul-08 S9070

    TCST1030

    Abstract: Telefunken Phototransistor TCST1030L
    Text: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025 Telefunken Phototransistor TCST1030L

    TCST1030

    Abstract: TCST1030L
    Text: TCST1030 L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025 TCST1030L

    Telefunken Phototransistor

    Abstract: TCST1030 TCST1030L
    Text: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025 Telefunken Phototransistor TCST1030L

    TCST1030

    Abstract: No abstract text available
    Text: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 D-74025

    TCST1030

    Abstract: No abstract text available
    Text: TCST1030 L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector


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    PDF TCST1030 08-Apr-05

    TCST1030

    Abstract: Telefunken Phototransistor
    Text: TCST1030 TELEFUNKEN Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.


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    PDF TCST1030 D-74025 TCST1030 Telefunken Phototransistor

    Untitled

    Abstract: No abstract text available
    Text: TCST1030 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none • Typical output current under test: IC = 2.4 mA


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    PDF TCST1030 TCST1030 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    TCRT5000 sensor circuit

    Abstract: TCST1030 sensor cny70 TCST2202
    Text: TCST1030 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none • Typical output current under test: IC = 2.4 mA


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    PDF TCST1030 2002/95/EC 2002/96/EC TCST1030 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 TCRT5000 sensor circuit sensor cny70 TCST2202

    TCST1030

    Abstract: No abstract text available
    Text: TCST1030 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none • Typical output current under test: IC = 2.4 mA


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    PDF TCST1030 TCST1030 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TCST1030 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none • Typical output current under test: IC = 2.4 mA


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    PDF TCST1030 TCST1030 2002/95/EC 2002/96/EC 18-Jul-08

    TCST525

    Abstract: No abstract text available
    Text: TCPT1300X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4


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    PDF TCPT1300X01 AEC-Q101 2002/95/EC 2002/96/EC TCPT1300X01 11-Mar-11 TCST525

    TCPT1300

    Abstract: No abstract text available
    Text: TCPT1300X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4


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    PDF TCPT1300X01 AEC-Q101 2002/95/EC 2002/96/EC TCPT1300X01 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 TCPT1300

    Untitled

    Abstract: No abstract text available
    Text: TCPT1350X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4


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    PDF TCPT1350X01 AEC-Q101 TCPT1350X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    tfk4

    Abstract: No abstract text available
    Text: Temic TCST1030 L Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector


    OCR Scan
    PDF TCST1030 D-74025 10-Dec-97 tfk4

    tfk4

    Abstract: TCST1030
    Text: Temic TCST1030 L Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector


    OCR Scan
    PDF TCST1030 D-74025 10-Dec-97 tfk4

    tfk4

    Abstract: temic tcst telefunken tcst
    Text: Temic TCST1030 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description T his device has a com pact construction w here the em itting-light sources and the detectors are located faceto-face on the sam e optical axis.


    OCR Scan
    PDF TCST1030 17-Jun-96 tfk4 temic tcst telefunken tcst