SF 819 B Search Results

sf 819 d

Contextual Info: CHT SERIES TYPE N AND SMA CONNECTORS High Power Coaxial Terminations 26 The CHT Series High Power Coaxial Terminations are Conduction Cooled Loads. They are designed to be mounted on a Heat Sink Ground Plane or a Chill Plate. The Power Ratings Require that the Base Plate of

sf 819 d

Abstract: SF 819 B CHT-500 nf 736
Contextual Info: CHT SERIES TYPE N AND SMA CONNECTORS The CHT Series High Power Coaxial Terminations are Conduction Cooled Loads. They are designed to be mounted on a Heat Sink Ground Plane or a Chill Plate. The Power Ratings Require that the Base Plate o f the CHT-15-1 and -2 does not exceed 100°C or 85°C for all other sizes.

Contextual Info: CHT SERIES TYPE N AND SMA CONNECTORS High Power Coaxial Terminations 28 The CHT Series High Power Coaxial Terminations are Conduction Cooled Loads. They are designed to be mounted on a Heat Sink Ground Plane or a Chill Plate. The Power Ratings Require that the Base Plate of

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

SF 818 D

Abstract: 1290mm nf 736
Contextual Info: HIGH POWER COAXIAL TERMINATIONS CONDUCTION COOLED The 3000 Series High Power C o a x ia l Term inations are C o n d u c tio n C o o le d Loads th a t require m ounting to an external h e a t sink. Meets a p p lic a b le portions o f MIL-E-5400 a n d MIL-R-55342.

Contextual Info: gh Power Coaxial Term CHT SERIES TYPE N AND SMA CONNECTORS The CHT Series High Power Coaxial Terminations are Conduction Cooled Loads. They are designed to be mounted on a Heat Sink Ground Plane or a Chill Plate. The Power Ratings Require that the Base Plate of

b342d

Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Contextual Info: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.

78510

Abstract: ribbon cable socket asme angle in table 37252
Contextual Info: 8 7 6 5 4 3 2 1 NOTES 1 MATERIAL: BODY: HIGH TEMP GLASS FILLED POLYESTER, GRAY UL94V-0 CONTACTS: COPPER ALLOY 3MTM Ribbon Cable Socket 2 mm X 2 mm Pitch 158 Series 5.22 .206 2 PLATING: 2.03-3.81 m [80-150 NICKEL UNDERPLATE 0.38 m [15 in] OR 0.76 m [30 in] AVG

Contextual Info: 8 7 6 5 4 3 2 1 NOTES 1 MATERIAL: BODY: HIGH TEMP GLASS FILLED POLYESTER, GRAY UL94V-0 CONTACTS: COPPER ALLOY 3MTM Ribbon Cable Socket 2 mm X 2 mm Pitch 158 Series 5.22 .206 2 PLATING: 2.03-3.81 m [80-150 NICKEL UNDERPLATE 0.38 m [15 in] OR 0.76 m [30 in] AVG

Contextual Info: 8 7 6 5 4 3 2 1 NOTES 1 MATERIAL: BODY: HIGH TEMP GLASS FILLED POLYESTER, GRAY UL94V-0 CONTACTS: COPPER ALLOY 3MTM Ribbon Cable Socket 2 mm X 2 mm Pitch 158 Series 5.22 .206 2 PLATING: 2.03-3.81 m [80-150 NICKEL UNDERPLATE 0.38 m [15 in] OR 0.76 m [30 in] AVG

ALCATEL A 1905 LMI

Abstract: A 1905 LMI hy 1607 3CN 00410 JK SK 3354 thermistor 10 SP DFB 1570 Alcatel dfb laser HY 1602 td 1583
Contextual Info: Alcatel 1905 LMI Up to 20 mW WDM L-band version for external modulation CW 1.55 µm Laser Module with optical Isolator Description This laser module contains an Alcatel SLMQW DFB laser and is designed for use with external modulation optimized for high power Wavelength Division Multiplexed

sf 818 d

Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
Contextual Info: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185

weidmuller eg 01

Abstract: SB-S11-P1-01-1-1A ess20-124 ESS20-1 DIN Rail Terminal Blocks DIODE MOD E67320 1-24DC din 46244-A6.3-0.8 DIN IEC 60068-2-11 k potential
Contextual Info: Electronic Circuit Breaker with reset input ESS20-1. Description The special device ESS20-1. is a further extension of the product line “electronic circuit breakers”. Type ESS20-1. has a width of only 12.5 mm and selectively protects all DC 24 V loads through a combination

PLC SHARP JW-22CU

Abstract: JW-22CU PLC SHARP JW20 zw-10c3 ZW-28M124 Sharp JW-14PG jw-14pg JW-22kc ZW-28M122 JW20H
Contextual Info: Version 1.0 Produced in Mar. 2004 R SSharp Programmable Controller Model name Hand-held programmer User's Manual JW-15PG Thank you for purchasing the JW-15PG hand-held programmer for the Sharp programmable controller satellite W series. This book the user's manual describes the operation of the JW-15PG.

fmtd 015

Abstract: AV2666 MO-137 sharp tv audio section diagram SOLID STATE AUDIO AMPLIFIERS
Contextual Info: AVS Technology AV2666 24-bit 192kHz Stereo Audio DAC with Headphone Amp DESCRIPTION The AV2666 is a high performance, low power stereo audio digital to analog converter DAC with integrated stereo headphone amplifier. It is an idea device for any portable and set-top

OM321

Abstract: sf 818 d P17M sf 819 d DIN45004 TYP3026
Contextual Info: N AMER PHI LI P S/ DI SCR ET E 2SE D • bbS 3T3 1 001030=1 1 ■ OM321 l - 0 \ HYBRID VHF/UHF WIDE BAND AMPLIFIER Tw o-stage wide-band am plifier in the hybrid technique, designed for use in m ast-head b o o ster-am p lifiers, as p re-am p lifier in MATV sy stem s, and a s general-purpose ampli'

ALCATEL A 1905 LMI

Abstract: 3CN 00410 JK A 1905 LMI alcatel 1603 hy 1607 Alcatel dfb laser 1905 laser alcatel TL photodiode ge SZ 1596 Alcatel dfb laser
Contextual Info: Alcatel 1905 LMI Up to 20 mW WDM L-band version for external modulation CW 1.55 µm Laser Module with optical Isolator Description This laser module contains an Alcatel SLMQW DFB laser and is designed for use with external modulation optimized for high power Wavelength Division Multiplexed

sf 819 transistor

Abstract: 27e transistor transistor BDY29
Contextual Info: Power Transistors File Number HARRIS 819 SEMICOND SECTOR 2 ?E D m BDY29 □ 0 2 0 1 7 ci 5 H H A S 4302271 High-Power High-Current Transistor Silicon N -P -N Devices for Applications in Industrial and C o m m ercial Equipm ent TERMINAL DESIGNATIONS Features:

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Contextual Info: index of CD! Part Numbers CDI Part No. Page No. CDI Part No. . .41 5 2 0 5 -2 13 4 5 . . . 1345-1 .41 . 1 3 4 5 -2 . . 1604-11 4004-11 . . 5 2 0 5 -4 42 5206-1 .42 5 2 0 6 -2 . . .42 4 0 0 4 -5 . 42 CDI Part No. . 29 5263-1 . . .29 5 2 6 3 -2 . . .29 5 2 6 3 -3 .

35N30

Abstract: rm 1117 ixtm35n30
Contextual Info: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35

Contextual Info: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)