SF10D Search Results

SF10G13

Abstract: SF10F13 VG207B 207B SF10L13 SF10N13 SF10B13 SF10D13 VG-207B TOSHIBA THYRISTOR
Contextual Info: TOSHIBA {DISCRETE/OPT0> 3T T^AS'-AST D e I ^ G ^ E S O ODDSETO 3 PH A SE CUIM I KUL T H Y R IS T O R SF10N13 1000V M AXIMUM RATINGS C H A R A C T E R IS T IC SF10B13 SF10D13 Repetitive Peak Off-State Voltage SF10F13 and Repetitive SF10G13 Peak Reverse S F 10J 13

SF10AG

Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

SF10D300

Abstract: SF10D300D2
Contextual Info: SF10D300D2 Ultrafast Recovery Rectifier 300V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current 4  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

SF10

Abstract: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

DO-41

Abstract: DS24012 DO41
Contextual Info: SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Super-Fast Switching for High Efficiency Surge Overload Rating to 30A Peak

SF10D300

Contextual Info: SF10D300D2 Ultrafast Recovery Rectifier 300V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current 4  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: n in n c c u I N C iv O R /J P O C R A T j E SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER D Features X Glass Passivated Die Construction X Super-Fast Switching for High Efficiency X Surge Overload Rating to 30A Peak X Low Reverse Leakage Current

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

SF10D14

Abstract: SF10G14 SF10B14 TOSHIBA THYRISTOR 13-14A1A thyristor H 40 TB 16A
Contextual Info: 3T TOSHIBA -CDISCRETE/OPTOJ dF I ^ G T T B S D DDDSS71 S T t - PHASE CONTROL THYRISTOR Unit in mm 400V SF10G14 10A MAXIMUM RATINGS ¿14.2MAX SYM BOL C H A R A C T E R IS T IC R epetitive P eak O ff-S tate V oltage and R ep etitive P eak R e v e r s e V oltage

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

BT 812 600bw

Abstract: BT810 800BW BT810-800BW BT 808 600C BT 808 600 replacement TYN412 TYN408G TYN604 T2513MK TLS106-4
Contextual Info: CROSS REFERENCE INDUSTRY PART NUMBER SQS-THOMSON SQS-THOMSON DIRECT SIMILAR REPLACEMENT REPLACEMENT INDUSTRY SGS-THOMSON SGS-THOMSON DIRECT PART NUMBER. SIMILAR REPLACEMENT REPLACEMENT 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A 2N6343 2N6343A

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210