SFE 410 Search Results

SFE107M

Abstract: SFE 10.7 Mj SFE 10.7 M p
Contextual Info: CERAMIC FILTERS LOW LOSS, HIGHLY SELECTIVE, MINIATURE m u R a ta SFE M A /M S /M J/M H 10.7MHz The standard SFE 10.7 line of ceramic filters are extremely reliable devices that exhibit excellent waveform symmetry. These filters have traditionally found wide application in

wl 1281

Abstract: SFE-130W-14150-38
Contextual Info: 6_ ? A 0-6 10.06 Ü. 6-30 30-120 ±0.2 ±0.1 fa 0-3 ± 0.2 fa 3-6 ±0.5 6-30 ± 0.8 D D DIRECTION OF ROTATION ix jR : 1. S jïàJîstjL'j' hi m3 2. l i t t Æ : 3. O V ,# ié }C C W . A4 DRAWER: CHECKER: 3. TITEL* ÏW® MUSTER NO: SFE-130W-14150-38

APT5027BVR

Abstract: 500V20A APT5027
Contextual Info: APT5027BVR ADVANCED W ZA P o w e r Te c h n o l o g y 500V 20A 0.270Í2 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFE Ts. This new technology minimizes the J F E T effect, increases packing density and reduces the on-resistance. Power M OS V

Contextual Info: A m 9 5 1 6 A Universal DM A Controller UDC FINAL D IS T IN C T IV E C H A R A C T E R IS T IC S T ra n sfe r M odes: S ingle, d em and d e d ic a te d w ith bus hold, d em and d e d ic a te d w ith bus release, dem and in terle ave 16 M B physical add ressing range

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT

murata filter SFE 10.7

Abstract: sfe 6.5MHz Filter sfe 5.5 murata sfe 6.5MHz MURATA sfe 5.5 MHZ sfe 455khz filter sfe 4.5 murata 5.5MHz ceramic Filter sfsh6 SFE10.7MHY
Contextual Info: MHz Filters Introduction Today, most FM radio designs use 10.7MHz IF filters. The characteristics of these filters help determine the performance characteristics of the radio it is used in. Besides providing low cost filtering, ceramic10.7MHz IF filters provide

Contextual Info: TOSHIBA TMP47C434/634 CMOS 4-BIT MICROCONTROLLER TMP47C434N, TMP47C634N The 47C434/634 are based on the TLCS-470 CMOS series. The 47C434/634 have display on-screen circuit to display characters and marks which indicate channel or tim e on TV screen, A/D converter inpu t, and D/A

panasonic inverter manual vf 200

Abstract: panasonic inverter manual vf 100 sony 369-42 murata filter cfw 455 ht murata filter cfj455 CFWM 450 HT TA8864N cfw 455 murata CFW 455 HT mitsubishi inverter fr service manual
Contextual Info: The Piezoelectric Effect Piezoelectric Effect Basics A piezoelectric substance is one that produces an electric charge when a mechanical stress is applied the substance is squeezed or stretched . Conversely, a mechanical deformation (the substance shrinks or expands) is produced

murata filter cfm 455 d

Abstract: CFJ455K 13 murata filter cfj455k e10.7s CFWM 450 CFM455D cfj455K14 murata ceramic filter e10.7a cfj455k5 murata murata cfj 455
Contextual Info: FILTERS FOR AM APPLICATIONS 450–470kHz SFU/SFZ SERIES SFU450B14 for contact to IFT SFZ450HL3/JL3/KL3 SFZ450H3/J3/K3 (for contact to resistor) FEATURES • Center frequency range between 450 and 470kHz is available. Standard tolerance is ±2kHz. ■ For synthesizers, the types of center

STF 410 B 2 A

Abstract: DEUTSCH SRE sfe 410 COMPAGNIE DEUTSCH reb 07 time relay Deutsch socket SME410 DSAHI00046190.txt deutsch sfe
Contextual Info: Serie REB Division Relais France FP-REL-22/10/02 indice c Her metically sealed time delay single break relay Hermetically „ General characteristics Metal can, sealed time delay relay, with 2PDT output Sizes Mass Timing range Finish Mating socket 25,8 x 25,8 x 25,7 mm maxi

7420A

Abstract: 7.5b 35 2N5840 2N5839
Contextual Info: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages

fc4k

Abstract: 4016B AD10 AD17 Z8000 CD 4016 PIN DIAGRAM AP-28A 16-Bit Microcomputers u107 refresh logic
Contextual Info: Advanced Micro Computers A subsidiary of Advanced Micro Devices Am96/1000 Series Dynamic Random-Access Memory Boards User’s Manual 00680140 $5.00 REVISION RECORD REVISION 01 DESCRIPTION Preliminary Issue 5/15/80 02 Manual Updated To Support A3 Fabrication Level

4134 mosfet

Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
Contextual Info: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.

Contextual Info: f e j BENCHMARQ _bq3285 Real-Time Clock RTC Features >• >- D irect clock/calendar replacem ent for IBM AT-compatible com puters and o th er applications >• Functionally compatible w ith th e DS1285/MC146818B - Closely m atches MC146818A pin configuration

scn68230

Abstract: SCN68230CAN48 scn6823 SCN68230C8N48 IC LA 4127 68230
Contextual Info: JANUARY 1983 MICROPROCESSOR DIVISION PARALLEL INTERFACE/TIMER S C N 68230 P re lim in a r y DESCRIPTION The SCN68230 Parallel In terface/T im er Pl/T provides ve rsatile d ouble buffered parallel Inte rfa ce s and an ope ra tin g sys­ tem oriented tim e r to S68000 system s. The

GI 9340

Contextual Info: 10 S S3 NOTES IY D 'J ' j 'J I. I5X A LJ P BTP U L 9 4 V -0 , U S 27^74; 'J > L MATERIAL HOUSING : G.F. I5Z PBTP (U L94V -0) TERMINAL : PHOSPHOR BRONZE 1.27 tC o /A 'J T iL A T -A J L 6 .0 6 * s G i l JH h I ,A V FOR USE WITH AWG*26 & *2 8 STRANDED WIRE (CONSISTS OF 7 CONDUCTORS)

BFR49

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in

Contextual Info: < ÿ > 2 jL Œ P ro d u c t S p e c ific a tio n Z8016 Z8000 Z-DTC Direct Memory Access Transfer Controller O c to b e r 1988 FEATURES • M em ory-to-peripheral tra n s fe rs up to 2 .6 6 M bytes per second at 4 MHz. ■ M em ory-to-m em ory tra nsfers up to 1.33M bytes per

4302 burr brown

Abstract: burr-brown 3501A burr-brown Model 4302 4302 multifunction converter burr brown op amp 3501a 1N4154 EJ-10
Contextual Info: 4302 B U R R -B R O W N ’ •b b | 4302 Low Cost MULTIFUNCTION CO N V ER TER FEATURES • LOW COST Efl ■SMALL PACKAGE - Dual-in-line • RELIABLE HYBRID CONSTRUCTION FUNCTIONS ACCURACY MULTIPLY OIVIDE SQUARE SQUARE ROOT EXPONENTIATE ROOTS SINE e COSINE 0

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

Transistor SJE 5331

Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
Contextual Info: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VS-2 HIGH-SPEED SWITCHING USE FS50VS-2 OUTLINE DRAWING * Dimensions in mm * I q J w e Q w r 10V DRIVE V d s s .100V o +i CO C\i q w e r q o - GATE DRAIN

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE FS50VSJ-2 OUTLINE DRAWING L q Dimensions in mm J w e 6 +i CD Q w r 4V DRIVE q w e r V d s s .10 0 V rDS ON (MAX). 4 8 m i2