SFR 135 Search Results

Contextual Info: RAYCHEM Tubing Products 1 SFR Heat-shrinkable Tubing Very Flexible, Flame-Retardant, Silicone Elastomer Tubing Product Facts Outstanding low-temperature flexibility • Resistance to hydraulic fluids, fuel, and lubricating oil ■ Very good ablative characteristics: when

MIL-PRF-46846

Contextual Info: RAYCHEM Tubing Products 1 SFR Heat-shrinkable Tubing Very Flexible, Flame-Retardant, Silicone Elastomer Tubing Product Facts Outstanding low-temperature flexibility • Resistance to hydraulic fluids, fuel, and lubricating oil ■ Very good ablative characteristics: when

SFR04

Abstract: sfr 135 Thyristor 220V 220V DC power control SFR150U4BB2 SFR300L4BB1 SFR300U4BB2 SFR50L4BB1 SFR80L4BB1 SFR80U4BB2
Contextual Info: 1. S T U D T Y P E T H Y R IS T O R S T A C K S IN G IE -P H A S E BRIDGE W ITH 2 T H Y R IS T O R S ON LINE C O M M O N A C SFR300L4BB1, SFR300U4BB2 T h e SFR 300L 4B B 1 «nd SFR 300U 4B B 2 s e r ie s a re thyr is to r sta c k s with two th y ris to rs and two r e c ­

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

SFR 252 diode

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS on = 0.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: SFR/U9120 Advanced Power MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V

Contextual Info: SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS on = 0.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: IHLP-3232DZ-1A www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

IHLP-1212AB-11

Contextual Info: IHLP-1212AB-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applications up to SFR see table below • Lowest DCR/ H, in this package size

PK0810-472K-S

Abstract: TC-221M-1A-5026 TC-471M-1A-6026 TC-900M-5A-9026 TC-501M-3A-9426 VC1019-333K-UL TC-430M-1A-4426 TC-290M-4A-6026 enamelled copper wire tables TC-101M-5A-8026
Contextual Info: 89 RF Peaking Coils - PK 0608 - PK 0810 - PK1012 Series • • • • • Excellent Q, high SFR Radial mounting Small size PVC sleeving or UL tube Operating temperature range : - 20 °C to + 80 °C Specifications • Inductance range : 1.0 to 100 mH • Current rating :

sfr 135

Abstract: TA 8269 H diode SFR-135
Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

Contextual Info: IHLP-3232DZ-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

IHLP-1212AB-11

Contextual Info: IHLP-1212AB-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applications up to SFR see table below • Lowest DCR/ H, in this package size

diode SFR-135

Abstract: kta 3-25
Contextual Info: SFR/U9014 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = -6 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA M ax. @ VOS = -60V

Contextual Info: IHLP-3232DZ-1A www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

IFSC1008

Abstract: IFSC1111 IFSC1515 IFLP4040 IHLP16
Contextual Info: IHLP-3232DZ-1A www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

Contextual Info: IHLP-3232DZ-1A www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

Contextual Info: IHLP-3232DZ-1L www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

Contextual Info: IHLP-3232DZ-1L www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

Contextual Info: IHLP-3232DZ-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applicatuions up to SFR see table below • Operating temperature up to 125 °C

Contextual Info: SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS on = 0.5 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.6 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -4.9 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

UDA1330ATS

Abstract: AT89C51SND1 MAX4468
Contextual Info: Song Quality Improvement Using the DAC on AT89C51SND1 Reference Design Signal to noise ratio can be improved by controlling the song level both with the external DAC and with the AT89C51SND1 song level SFR register. To control the song level with the DAC UDA1330ATS, the L3 mode must be used.