SGB30N60, Search Results
SGB30N60, Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SGB30N60 |
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Fast IGBT in NPT Technology | Original | 422.86KB | 12 | ||
SGB30N60 |
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IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 41.0 A; IC(max) @ 100°: 30.0 A | Original | 382.44KB | 11 | ||
SGB30N60 |
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30A 600V TO263AB SMD IGBT | Original | 364.42KB | 12 | ||
SGB30N60 | Siemens | Original | 1.09MB | 7 | |||
SGB30N60ATMA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO263-3 | Original | 378.93KB |
SGB30N60, Price and Stock
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Infineon Technologies AG SGB30N60ATMA1IGBT NPT 600V 41A TO263-3-2 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGB30N60ATMA1 | Reel |
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Siemens SGB30N6041 A, 600 V, N-CHANNEL IGBT, TO-263AB |
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SGB30N60 | 70 |
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Infineon Technologies AG SGB30N60Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGB30N60 | 1,000 |
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