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    Contextual Info: SGNC320MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55.0dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 16.5dB(typ.) @ f=0.9GHz Proven Reliability Only For peak stage of Doherty amplifier DESCRIPTION


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    SGNC320MK 25deg 42dBm PDF