SGS-THOMSON MOSFET IPAK Search Results

sc06140

Abstract: powermesh mosfet STD3NB50
Contextual Info: Zjï SGS-THOMSON STD3NB50 ¡ILIOTI^OKinei N - CHANNEL 500V - 2.5 ÌÌ - 3A - IPAK/DPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STD 3N B50 500 V < 2.8 a 3 A • . . . . TYPICAL R D S ( o n ) = 2 . 5 EXTREMELY HIGH dv/dt CAPABILITY

3NB50

Contextual Info: SGS-THOMSON M TO »« STD3NB50 N - CHANNEL 500V - 2.5Q - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD 3N B50 • . . . . V dss RDS on Id 500 V < 2.8 Q 3 A TYPICAL RDS(on) = 2.5 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD1NB50 N - CHANNEL 500V - 7.5Î2 - 1 ,4A - IPAK PowerMESH MOSFET TYPE STD1N B50 V dss 500V Id R D S (o n ) < 9 Q. 1 .4 A . • TYPICAL RDS(on) = 7.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON VND10N06/VND10N06-1 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE . . . . . . . . . Vclamp RDS on I lim VND10N06 60 V 0 . 3 Q. 10 A VND10N06-1 VNP1 0 N0 6FI 60 V 60 V 0 . 3 Q. 0 . 3 Q. 10 A

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V STD2N B60 dss 600 V RDS(on) Id < 3 .6 Q. 2 .6 A . • TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

Contextual Info: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STD4NB40 V dss RDS(on) Id 400 V < 1 .8 a 3.7 A • TYPICAL RDS(on) = 1.47 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

SC06140

Abstract: STD2NB60
Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STD2N B60 V dss R D S (o n ) Id 600 V < 3.6 Q. 2 .6 A . • TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON STD4NB40 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STD4NB40 . . . . . V dss RDS(on) Id 400 V < 1 .8 Q. 3.7 A TYP IC A L RDs(on) = 1.47 i2 EX TR E M E LY HIGH dv/dt CAPABILITY

STD20NE03L

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD20NE03L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R dS(o ii) Id STD20NE03L 30 V < 0 .0 2 0 Q. 20 A . TYPICAL RDs(on) = 0.016 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

2nb60

Contextual Info: s = 7 SGS-THOMSON ^7# Kl «iLiM(s iO(gS STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE S TD 2N B60 V dss RDS(on) Id 600 V < 3.6 Q 2.6 A • TYPICAL RDS(on) = 3 .3 Q m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

SGS-Thomson mosfet ipak

Contextual Info: “ TW SGS-THOMSON VND7N04/VND7N04-1 VNP7N04FI/K7N04FM MC §lELiCTI3«D Bi "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND7N04 VND7N04-1 VNP7N04FI VNK7N04FM Ve lamp 42 42 42 42 V V V V Rl>S(on| llim 0.14 n o .i4 n 0.14 Q 0.14 n 7 7 7 7 % A A A A •

FZ 44 NS

Abstract: vn 300 T VNP5N07 mosfet vn 10 vnk5n07 SGS-Thomson mosfet ipak VN MOSFET D5N07-1
Contextual Info: SGS-THOMSON MDO^miCTIfMOlgl VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VN D 5N 07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V RDS on 0 .2 0 .2 0 .2 0 .2 a. Q. a. Q. 11im 5 5 5 5 A A A A . . . . . .

SGS-Thomson mosfet ipak

Contextual Info: f » • * /# SGS-THOMSON M<eœiliOTI!»!]0 § VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 V NP5N 07FI VNK5N07FM Velamp 70 70 70 70 V V V V Ros ony 0.2 n 0.2 i i 0.2 n 0.2 a llim 5 5 5 5 A A A A