SHOTTKY DIODE 56 Search Results

marking 105

Abstract: 2SB1123 FP105 2088a
Contextual Info: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

en3962

Abstract: transistor en3962 FP103 2SB1121 SB07-03C
Contextual Info: Ordering number:EN3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

FP102 equivalent

Abstract: 2SB1396 FP102 SB07-03C No39
Contextual Info: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

AX-8060

Abstract: 2SB1121 FP101 SB05-05CP
Contextual Info: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

FP105

Abstract: marking 105 2SB1123 2088a
Contextual Info: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

TA-0718

Abstract: 2088a FP107 2SB1396
Contextual Info: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

2SB1396

Abstract: FP102 SB07-03C
Contextual Info: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

Contextual Info: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

SB01-05CP

Abstract: SHOTTKY DIODE
Contextual Info: Ordering number :EN1916A SB01-05CP Shottky Barrier Diode 50V, 100mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148 [SB01-05CP] Features · Low forward voltage (VF max=0.55V).

SB07-015C

Abstract: diode 15V
Contextual Info: Ordering number :EN4438A SB07-015C Shottky Barrier Diode 15V, 700mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SB07-015C] Features · Low forward voltage (VF max=0.55V).

SB005-09CP

Contextual Info: Ordering number :EN1921A SB005-09CP Shottky Barrier Diode 90V, 50mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters and choppers . unit:mm 1148 [SB005-09CP] Features · Low forward voltage (VF max=0.7V).

RSX301LA-30

Abstract: shottky diode 56
Contextual Info: RSX301LA-30 Diodes Shottky barrier diode RSX301LA-30 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.2 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.2±0.15 0.1 4.7±0.3 56 !Features 1) Small and Thin power mold type (PMDT).

RSX301LA-30

Contextual Info: RSX301LA-30 Diodes Shottky barrier diode RSX301LA-30 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.2 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.2±0.15 0.1 4.7±0.3 56 !Features 1) Small and Thin power mold type (PMDT).

Contextual Info: Ordering number :EN1928B SB002-15CP Shottky Barrier Diode 150V, 20mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters and choppers . unit:mm 1148A [SB002-15CP] Features · Low forward voltage (VF max=0.75V).

en2995

Abstract: SB01W05C
Contextual Info: Ordering number :EN2995A SB01W05C Shottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A [SB01W05C] Features · Low forward voltage (VF max=0.55V).

Contextual Info: Data Sheet Shottky barrier diode RB050L-40 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3 3

RB050L-40

Contextual Info: Data Sheet Shottky barrier diode RB050L-40 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3 3

Contextual Info: RB050L-40 Data Sheet Shottky barrier diode RB050L-40 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3

RB050L

Contextual Info: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB050L-40TF Applications General rectification Land size figure Unit : mm Dimensions (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar

ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC

Abstract: electronic ballast for fluorescent lighting t5 simple circuit diagram of electronic choke EF25 TRANSFORMER electronic ballast for fluorescent lighting t8 transistor Electronic ballast t5 ELECTRONIC BALLAST 2 LAMP SCHEMATIC IEC60081 IEC-60929 t8 ballast circuits
Contextual Info: AN2982 Application note 1 x 54 W T5 fluorescent lamp ballast in wide input voltage range using the L6585DE - STEVAL-ILB005V2 Introduction This application note describes the STEVAL-ILB005V2 demonstration board equipped with the L6585DE lighting controller, STD7NM50N MOSFETs and an STTH1L06 Shottky diode

20V P-Channel Power MOSFET 500A

Abstract: CMLM8205
Contextual Info: CMLM8205 MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

CMLM8205

Abstract: mosfet low vgs
Contextual Info: Central CMLM8205 MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM DESCRIPTION: The Central Semiconductor CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low

DIODE 158

Abstract: Diode Sensors 23443 6960B ifr 6920
Contextual Info: Counters & Power Meters 6910/20/30 RF Power Sensors A range of 17 power sensors available for use with 6200B series MTS, CPM, 6960B and 6970 power meters • Wide frequency coverage 30 kHz to 46 GHz • Power levels from: -70 dBm 100 pW to +44 dBm (25 W)

power meter 6930

Abstract: 6914S DIODE 158 Sensor 6914 6960B 6914 APC-7 6934S power thermocouple
Contextual Info: Counters & Power Meters 6910/20/30 RF Power Sensors A range of 17 power sensors available for use with 6200B series MTS, CPM, 6960B and 6970 power meters High Measurement Accuracy • Wide frequency coverage 30 kHz to 46 GHz • Power levels from: -70 dBm 100 pW to