SI10 Search Results

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition

SI1013CX

Abstract: 71377
Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

CIP-51

Abstract: 2 pin crystal oscillator 24.5 mhz
Contextual Info: Si1002-C Ultra-Low Power 64 kB, 10-bit ADC MCU with Integrated 240–960 MHz Transceiver Transceiver Features Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs

SC-89

Abstract: Si1026X VISHAY MARKING S10 SMA Si1026X-T1-GE3
Contextual Info: Si1026X Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.)

SC-89

Abstract: Si1026X
Contextual Info: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)

Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches

Contextual Info: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V

Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400

Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.540 at VGS = 4.5 V 0.5 0.600 at VGS = 2.5 V 0.2 0.700 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (TYP.) 0.72 nC D1

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SC-75A

Abstract: SC-89 Si1031R Si1031X marking code h
Contextual Info: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D

SC-75

Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated

SC-89

Abstract: Si1026X
Contextual Info: Si1026X New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) 60 1.40 @ VGS = 10 V 1 to 2.5 500 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,

SC-89

Abstract: Si1023X sot-563 MOSFET D1
Contextual Info: Si1023X New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D

"MARKING CODE M"

Abstract: SC-89 Si1035X
Contextual Info: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V

7133-1

Abstract: si1022r
Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs