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    SI1563 Search Results

    SI1563 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI1563DH
    		Vishay Siliconix MOSFETs Original PDF 64.22KB 8
    Si1563DH SPICE Device Model
    		Vishay Complementary 20-V (D-S) Low Threshold MOSFET Original PDF 418.1KB 4
    SI1563DH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF 14
    SI1563DH-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF 14
    Si1563EDH
    		Vishay Intertechnology Complementary 20-V (D-S) Low-Threshold MOSFET Original PDF 62.46KB 8
    SI1563EDH
    		Vishay Siliconix MOSFETs Original PDF 62.47KB 8
    Si1563EDH SPICE Device Model
    		Vishay Complementary 20-V (D-S) Low Threshold MOSFET Original PDF 356.22KB 4
    SI1563EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF 14
    SI1563EDH-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF 14
    SF Impression Pixel

    SI1563 Price and Stock

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    Vishay Intertechnologies SI1563DH-T1-E3

    MOSFET N/P-CH 20V SC70-6
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    Vishay Intertechnologies SI1563EDH-T1-E3

    MOSFET N/P-CH 20V SC70-6
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    Bristol Electronics SI1563EDH-T1-E3 352
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    Vishay Intertechnologies SI1563DH-T1-GE3

    MOSFET N/P-CH 20V SC70-6
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    Vishay Intertechnologies SI1563EDH-T1-GE3

    MOSFET N/P-CH 20V SC70-6
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    Vishay Siliconix SI1563DH-T1-E3/BKN

    COMPLEMENTARY 20V LOW-THRESHOLD MOSFET
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    SI1563 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		Si1563DH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11 PDF

    Si1563EDH

    Abstract: diode 0750 SI1563EDH-T1
    Contextual Info: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V


    Original     		Si1563EDH OT-363 SC-70 SC-70 18-Jul-08 diode 0750 SI1563EDH-T1 PDF

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125 PDF

    Si1563EDH

    Abstract: "MARKING CODE EA"
    Contextual Info: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		Si1563EDH SC-70 OT-363 SC-70 S-03943--Rev. 21-May-01 "MARKING CODE EA" PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		Si1563EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		Si1563EDH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11 PDF

    Contextual Info: Si1563DL New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		Si1563DL SC-70 OT-363 SC-70 S-03177--Rev. 05-Mar-01 PDF

    Si1563EDH

    Contextual Info: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1563EDH 18-Jul-08 PDF

    mosfet low vgs

    Abstract: S-21483-Rev Si1563DH
    Contextual Info: Si1563DH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching 0.360 @ VGS = 2.5 V


    Original     		Si1563DH SC-70 OT-363 SC-70 18-Jul-08 mosfet low vgs S-21483-Rev PDF

    AN609

    Abstract: Si1563EDH
    Contextual Info: Si1563EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1563EDH AN609 28-Mar-07 PDF

    SI1563EDH

    Abstract: MARKING CODE EA "MARKING CODE EA"
    Contextual Info: Si1563EDH New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		Si1563EDH SC-70 OT-363 SC-70 S-03177--Rev. 05-Mar-01 MARKING CODE EA "MARKING CODE EA" PDF

    Si1563DH

    Contextual Info: SPICE Device Model Si1563DH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1563DH 18-Jul-08 PDF

    Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		Si1563DH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		Si1563DH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		Si1563DH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI1563EDH-T1-E3

    Abstract: Si1563EDH
    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		Si1563EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 SI1563EDH-T1-E3 PDF

    SI1563DH-T1-E3

    Abstract: Si1563DH
    Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		Si1563DH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 SI1563DH-T1-E3 PDF

    MARKING CODE EA

    Abstract: mosfet low vgs marking EA sot-363 Si1563EDH
    Contextual Info: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		Si1563EDH SC-70 OT-363 SC-70 08-Apr-05 MARKING CODE EA mosfet low vgs marking EA sot-363 PDF

    Si1563DH

    Contextual Info: Si1563DH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching 0.360 @ VGS = 2.5 V


    Original     		Si1563DH SC-70 OT-363 SC-70 S-21483--Rev. 26-Aug-02 PDF

    "low threshold mosfet"

    Abstract: Si1563EDH
    Contextual Info: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1563EDH 14-Feb-01 "low threshold mosfet" PDF

    AN609

    Abstract: Si1563DH
    Contextual Info: Si1563DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1563DH AN609 28-Mar-07 PDF

    Si1563EDH

    Contextual Info: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1563EDH S-52393Rev. 21-Nov-05 PDF

    Si1563EDH

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		Si1563EDH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11 PDF