SI2316 Search Results
SI2316 Price and Stock
Vishay Siliconix SI2316BDS-T1-GE3MOSFET N-CH 30V 4.5A SOT23-3 |
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SI2316BDS-T1-GE3 | Reel | 33,000 | 3,000 |
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SI2316BDS-T1-GE3 | 20 |
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Vishay Siliconix SI2316BDS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET |
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SI2316BDS-T1-BE3 | Digi-Reel | 10,290 | 1 |
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Vishay Siliconix SI2316DS-T1-E3MOSFET N-CH 30V 2.9A SOT23-3 |
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SI2316DS-T1-E3 | Cut Tape | 10,089 | 1 |
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SI2316DS-T1-E3 | 3,000 | 1 |
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Vishay Siliconix SI2316BDS-T1-E3MOSFET N-CH 30V 4.5A SOT23-3 |
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SI2316BDS-T1-E3 | Cut Tape | 4,902 | 1 |
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SI2316BDS-T1-E3 | Bulk | 3,000 |
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SI2316BDS-T1-E3 | 6,000 | 1 |
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Vishay Siliconix SI2316DS-T1-GE3MOSFET N-CH 30V 2.9A SOT23-3 |
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SI2316DS-T1-GE3 | Reel | 3,000 |
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SI2316 Datasheets (9)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI2316BDS-T1-BE3 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET | Original | 225.84KB | 9 | |||
SI2316BDS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A SOT-23 | Original | 9 | ||||
SI2316BDS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A SOT23-3 | Original | 9 | ||||
Si2316DS | Vishay Intertechnology | N-Channel 30-V (D-S) MOSFET | Original | 42.23KB | 4 | |||
SI2316DS | Vishay Siliconix | MOSFETs | Original | 57.13KB | 4 | |||
SI2316DS | Vishay Siliconix | N-Channel 30-V (D-S) MOSFET | Original | 43.8KB | 4 | |||
Si2316DS SPICE Device Model |
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N-Channel 30-V (D-S) MOSFET | Original | 197.41KB | 3 | |||
SI2316DS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.9A SOT23-3 | Original | 8 | ||||
SI2316DS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.9A SOT23-3 | Original | 8 |
SI2316 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si2316ds-t1-e3Contextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS |
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11 | |
Si2316BDS
Abstract: Si2316BDS-T1-E3 Si2316DS
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Si2316BDS Si2316DS OT-23 Si2316BDS-T1-E3 Si2316DS-T1-E3 Si2316DS-T1 30-Aug-07 | |
Si2316DSContextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2316DS-T1 |
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Si2316DS O-236 OT-23) Si2316DS-T1 S-31990--Rev. 13-Oct-03 | |
Si2316DSContextual Info: \\\ SPICE Device Model Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si2316DS 0-to-10V 24-Jan-02 | |
Si2316BDS-T1-E3
Abstract: Si2316DS 313B marking code 313b
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Si2316BDS O-236 OT-23) Si2316DS Si2316BDS-T1-E3 08-Apr-05 313B marking code 313b | |
Si2316DSContextual Info: Si2316DS New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D 2 Top View |
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Si2316DS O-236 OT-23) S-05481--Rev. 21-Jan-02 | |
Contextual Info: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized |
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Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
Si2316DSContextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS |
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 18-Jul-08 | |
Si2316BDS
Abstract: marking code 313b Si2316BDS-T1-E3 Si2316DS 313b sot MARKING 313B
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Si2316BDS O-236 OT-23) Si2316DS Si2316BDS-T1-E3 18-Jul-08 marking code 313b 313b sot MARKING 313B | |
Si2316BDS-T1-E3
Abstract: Si2316BDS-T1-GE3 Si2316DS
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Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 11-Mar-11 | |
Contextual Info: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized |
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Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS |
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS |
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 08-Apr-05 | |
Contextual Info: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized |
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Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 11-Mar-11 | |
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AN609
Abstract: Si2316DS
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Si2316DS AN609 22-Aug-05 | |
Contextual Info: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si2316BDS 18-Jul-08 | |
Contextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2316DS-T1 |
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Si2316DS O-236 OT-23) Si2316DS-T1 08-Apr-05 | |
si2316ds-t1-e3
Abstract: Si2316DS
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11 | |
Si2316BDS-T1-E3
Abstract: Si2316BDS-T1-GE3 Si2316DS
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Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 18-Jul-08 | |
74879 datasheet
Abstract: 74879 Si2316BDS
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Si2316BDS S-71049Rev. 21-May-07 74879 datasheet 74879 | |
68302
Abstract: diode in 5394 AN609
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Si2316BDS AN609 19-Dec-07 68302 diode in 5394 | |
Si2316DSContextual Info: SPICE Device Model Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si2316DS 18-Jul-08 | |
si2316ds-t1-e3
Abstract: marking code vishay SILICONIX sot-23
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Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking code vishay SILICONIX sot-23 | |
sirf Atlas IV
Abstract: sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB
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LTC3577-3/LTC3577-4 800mA, 500mA, 500mA LTC3577-3) LTC3577-4) DFN14 LTC4098 600mA QFN20 sirf Atlas IV sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB |