SI2318 Search Results

Si2318DS

Abstract: Si2318DS-T1 C8 MARKING
Contextual Info: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G

Si2318DS

Abstract: Si2318DS-T1-E3
Contextual Info: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS

Si2318CDS

Contextual Info: SPICE Device Model Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

S-31731

Abstract: Si2318DS Si2318DS-T1 marking code vishay SILICONIX sot-23 C8 MARKING
Contextual Info: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G

Contextual Info: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS

Contextual Info: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS

AN609

Abstract: Si2318DS
Contextual Info: Si2318DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si2318CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS

Contextual Info: SPICE Device Model Si2318CDS www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

si2318cds

Abstract: MARKING CODE P9
Contextual Info: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

72585

Abstract: si2318ds
Contextual Info: SPICE Device Model Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI2318DS-T1-E3

Abstract: Si2318DS
Contextual Info: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS

SI2318CDS

Abstract: SI2318CDS-T1GE3
Contextual Info: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

72585

Abstract: Si2318DS
Contextual Info: SPICE Device Model Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G

DIODE SMD 5050

Abstract: smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin
Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AUTOMOTIVE APPLICATIONS SOLUTIONS MARKET SEGMENT w w w. v i s h a y. c o m Automotive Applications Solutions from Vishay Intertechnology Introduction Body Electric & Comfort Electric Sensors Immobilizer & Security Systems

Contextual Info: LT3497 Dual Full Function White LED Driver with Integrated Schottky Diodes DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Drives Up to 12 White LEDs 6 in Series per Converter from a 3V Supply Two Independent Boost Converters Capable of

MIC3223

Abstract: MSD1260-223ML-LD 08056D106MAT2A 12063D475KAT2A GRM188R60J106ME47D GRM319R61E475KA12D GRM188R71C473KA01D Schottky DIODE 3A SEI resistor AM2340N
Contextual Info: MIC3223 Evaluation Board High-Power Boost LED Driver with Integrated FET Bringing the Power to Light General Description How It Works The MIC3223 is a constant-current boost switching controller specifically designed to power a string of highpower LEDs. The MIC3223 has an input voltage range

ic hm 2007 Architecture

Abstract: ic hm 2007 internal block diagram ,Architecture 8050 sot-23 C1608COG1H220J dc adaptor 9v 2a Bead 220 ohm 2.5A 10uh coilcraft 1210 "Dual PNP Transistor" C1608COG1H102J sot-23-5 vishay
Contextual Info: SP6134 Dual Supply Synchronous Buck Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 3V to 15V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package 2A to 15A Ouput Capability Highly Integrated Design, Minimal Components

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT