SI2323 Search Results

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch

Contextual Info: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G

Si2323CDS

Abstract: 0749
Contextual Info: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si2323CDS

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

SI2323DS-T1-E3

Abstract: Si2323CDS Si2323DS si2323cdst1ge3 Si2323DS-T1-GE3 Si2323DS-T1
Contextual Info: Specification Comparison Vishay Siliconix Si2323CDS vs. Si2323DS Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2323CDS-T1-GE3 replaces Si2323DS-T1-GE3 Si2323CDS-T1-GE3 replaces Si2323DS-T1-E3 Si2323CDS-T1-GE3 replaces Si2323DS-T1

Si2323CDS

Abstract: 5218 AN609
Contextual Info: Si2323CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si2323DS New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.039 @ VGS = -4.5 V -4.7 0.052 @ VGS = -2.5 V - 4.1 0.068 @ VGS = -1.8 V - 3.5 APPLICATIONS D Load Switch D PA Switch

marking code vishay SILICONIX sot-23

Abstract: Si2323DS Si2323DS-T1-E3 SI2323DS-T1-GE3
Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si2323DS

Abstract: d3 marking
Contextual Info: Si2323DS New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.039 @ VGS = -4.5 V -4.7 0.052 @ VGS = -2.5 V - 4.1 0.068 @ VGS = -1.8 V - 3.5 APPLICATIONS D Load Switch D PA Switch

Si2323DS-T1-E3

Abstract: Si2323DS-T1 d3 marking Si2323DS D3 Marking code
Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • TrenchFET Power MOSFET Pb-free Available APPLICATIONS

Si2323DS

Abstract: 70111
Contextual Info: SPICE Device Model Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model Si2323CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

SI2323DS-T1-E3

Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si2323DS

Abstract: sot-23 CODE 41
Contextual Info: Si2323DS New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.039 @ VGS = -4.5 V -4.7 0.052 @ VGS = -2.5 V - 4.1 0.068 @ VGS = -1.8 V - 3.5 APPLICATIONS D Load Switch D PA Switch

Si2323DS

Abstract: 70111
Contextual Info: SPICE Device Model Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si2323DS-T1-E3

Abstract: Si2323DS
Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

4173

Abstract: 6679 AN609 Si2323DS
Contextual Info: Si2323DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si2323ds

Abstract: Si2323DS-T1-GE3
Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si2323DS

Abstract: Si2323DS-T1-E3 Si2323DS-T1
Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • TrenchFET Power MOSFET Pb-free Available APPLICATIONS

pj 69 SMD diode

Abstract: RX-2B RX2C RX2b bs3-1000 Monitor VD58 smd diode pj 72 c8051f320-gq VD58 ISL54100
Contextual Info: ISL54100AHDMI-EVALZ, ISL54105ACRZ-EVALZ Operation Manual for Intersil’s 4:1 and 1:1 TMDS HDMI Regenerator Evaluation Kits Application Note April 1, 2009 AN1453.2 Thank you for requesting Intersil’s high-performance TMDS signal multiplexor/regenerator/retimer evaluation kit. This

OSC4/SM

Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
Contextual Info: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user

sirf Atlas IV

Abstract: sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB
Contextual Info: LTC3577-3/LTC3577-4 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT