SI3455 Search Results

Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.

Si3441DV

Abstract: TSOP6
Contextual Info: TSOP-6 The Next Step for LITTLE FOOTR Selector Guide Maximum Ratings rDS on (W) Part Number VDS (V) VGS = 10 V VGS = 4.5 V Si3454DV/X 30 0.065 Si3455DV/X 30 0.10 Si3442DV/X 20 0.07 Si3441DV/X 20 0.10 VGS = 2.5 V ID (A) ( ) Configuration Available 0.095 "4.2

SI3455DV-T1

Abstract: Si3455DV
Contextual Info: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6

Si3455DV

Contextual Info: Si3455DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3455DV

Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.

Si3455DV

Contextual Info: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3455ADV

Contextual Info: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)

Si3455ADV

Abstract: Si3455ADV-T1
Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)

Si3455DV

Contextual Info: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si3455DV

Abstract: mosfet 23 Tsop-6
Contextual Info: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 RDS(ON) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

p-channel 7121

Abstract: Supersot 6 Si3455DV SI3455DV MARKING
Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.

Si3455ADV

Abstract: V53A
Contextual Info: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4431 mosfet

Abstract: 0795 4413 7420 AN609 Si3455ADV 73808
Contextual Info: Si3455ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3455ADV

Abstract: Si3455ADV-T1
Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)

Si3455ADV

Contextual Info: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Si3455ADV

Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = - 10 V - 3.5 0.170 @ VGS = - 4.5 V - 2.7 - 30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)