SI3457 Search Results

3271

Abstract: AN609 Si3457CDV 162609
Contextual Info: Si3457CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

si3457dv

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

Si3457BDV

Abstract: Si3457BDV-T1
Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1

Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6

SI3457BDV

Contextual Info: Si3457BDV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.054 @ VGS = -10 V -5.0 0.100 @ VGS = -4.5 V - 3.7 -30 TSOP-6 Top View 1 (4) S 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI3457BDV

Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 0.100 @ VGS = - 4.5 V - 3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3457BDV-T1

Vishay DaTE CODE tsop-6

Abstract: SI3457CDV-T1-GE
Contextual Info: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si3457DV VISH A Y Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 4* $ r DS(ON) (& ) Id (A) 0.065 @ V GS = —10 V ± 4 .3 0.100 @ V g s = ^ . 5 V ± 3 .4 -3 0 9 ° ' (4) S Q TSO P-6 Top View 1 6 2 5 3 4 6 ( 1 ,2 ,5 , 6) D •2.85 mm ■ P-Channel M O S FE T

Contextual Info: SPICE Device Model Si3457CDV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si3457BDV

Abstract: Si3457BDV-T1
Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1

si3457dv

Contextual Info: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.

Contextual Info: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.

Si3457CDV

Abstract: Si3457CDV-T1-E3
Contextual Info: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT

Si3457BDV

Abstract: Si3457BDV-T1-E3
Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6

S-80894-Rev

Abstract: Si3457CDV Si3457CDV-T1-E3
Contextual Info: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT

Contextual Info: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si3457CDV

Abstract: Si3457CDV-T1-E3 Si3457CDV-T1-GE3
Contextual Info: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

AN609

Abstract: Si3457BDV
Contextual Info: Si3457BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3456BDV

Abstract: Si3457BDV Si3457BDV SPICE Device Model
Contextual Info: SPICE Device Model Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3457DV

Contextual Info: Si3457DV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

Si3457BDV

Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 0.100 @ VGS = - 4.5 V - 3.7 - 30 TSOP-6 Top View 1 (4) S 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si3457BDV

Abstract: Si3457DV-T1 Si3457BDV-T1 Si3457BDV-T1-E3 Si3457DV
Contextual Info: Specification Comparison Vishay Siliconix Si3457BDV vs. Si3457DV Description: P-Channel, 30 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3457BDV-T1 Replaces Si3457DV-T1 Si3457BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3457DV-T1

Si3457CDV-T1-GE3

Abstract: SI3457 Si3457CDV Si3457BDV Si3457BDV-T1 Si3457BDV-T1-E3 Si3457CDV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3457CDV vs. Si3457BDV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3457CDV-T1-GE3 replaces Si3457BDV-T1-GE3 Si3457CDV-T1-E3 or Si3457CDV-T1-GE3 replaces Si3457BDV-T1-E3