SI3459 Search Results

Si3459BDV

Abstract: Si3459BDV-T1-E3 804-30 mosfet 23 Tsop-6
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS

Si3459BDV

Contextual Info: SPICE Device Model Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

TSOP-6

Abstract: SI3459DV
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2

Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI3459DV

Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G

Si3459BDV

Abstract: Si3459BDV-T1-E3
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS

SI3459DV-T1-GE3

Abstract: SI3459DV-T1-E3
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI3459DV

Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G

Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3459DV

Contextual Info: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3459BDV

Abstract: SI3459BDV-T1-GE3 Si3459BDV-T1-E3
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

dm 0765

Abstract: Si3459DV Si3459DV-T1-E3
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si3459BDV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si3459DV

Contextual Info: Si3459DV New Product Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.220 @ VGS = –10 V "2.2 0.310 @ VGS = –4.5 V "1.9 –60 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: _ Si3459DV VISHAY Vishay Siliconix New Product ▼ P-Channel 60-V D-S MOSFET *2 PRODUCT SUMMARY r DS(on) ( ) I d (A ) 0.220 @ VGS = -1 0 V ±2 .2 0.310 @ VGS = —4.5 V ±1 .9 V d s (V) ie< -6 0 (1 ,2 ,5 , 6) D Q TSOP-6

a 6151

Abstract: AN609 Si3459BDV 68616
Contextual Info: Si3459BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7113

Abstract: AN609 Si3459DV
Contextual Info: Si3459DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3459BDV

Abstract: Si3459BDV-T1-E3 Si3459BDV-T1-GE3
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3459DV

Abstract: Si3459DV-T1-E3 Si3459DV-T1 51166 70877
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2

si3459bdv

Abstract: TSOP 66 thermal resistance TSOP 66 Package thermal resistance 308I S0907
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3459DV

Abstract: 71527
Contextual Info: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range