SI35 Search Results

Contextual Info: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

72032

Abstract: Si3590DV
Contextual Info: Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET Power MOSFET

Contextual Info: Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V

7636 mosfet

Abstract: AN609 Si3585DV
Contextual Info: Si3585DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3588DV

Contextual Info: Si3588DV New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.080 @ VGS = 4.5 V 3.0 0.100 @ VGS = 2.5 V 2.6 0.128 @ VGS = 1.8 V 2.3 0.145 @ VGS = –4.5 V –2.2 0.200 @ VGS = –2.5 V

MOSFET 4407

Abstract: 4407 mosfet 4407 74811 4407 datasheet 4507 mosfet 9434 0624 CIRCUIT 4407 AN609
Contextual Info: Si3529DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si3588DV
Contextual Info: Si3588DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3585DV

Contextual Info: Si3585DV New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1

Si3590DV

Abstract: 30V 10.5A p-channel MOSFET Si3590DV SPICE Device Model
Contextual Info: SPICE Device Model Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V

72032

Abstract: Si3590DV
Contextual Info: Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET Power MOSFET

Si3586DV

Abstract: Si3586DV-T1-E3 Si3586DV-T1-GE3
Contextual Info: Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V

Si3552DV

Contextual Info: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 2.5 0.175 at VGS = 4.5 V 2.0 0.200 at VGS = - 10 V - 1.8 0.360 at VGS = - 4.5 V - 1.2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V

Si3588DV

Contextual Info: SPICE Device Model Si3588DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Si3529DV

Abstract: si3529
Contextual Info: Si3529DV Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.125 at VGS = 10 V 2.250 0.165 at VGS = 4.5 V 1.95 0.215 at VGS = - 10 V - 1.76 0.335 at VGS = - 4.5 V

Contextual Info: New Product Si3529DV Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.125 at VGS = 10 V 2.250 0.165 at VGS = 4.5 V 1.95 0.215 at VGS = - 10 V - 1.76 0.335 at VGS = - 4.5 V - 1.4 VDS (V) N-Channel P-Channel

Si3586DV

Abstract: Si3586DV-T1
Contextual Info: Si3586DV Vishay Siliconix New Product N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel rDS(on) (W) ID (A) 0.060 @ VGS = 4.5 V 3.4 0.070 @ VGS = 2.5 V 3.2 0.100 @ VGS = 1.8 V 2.5 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V

mosfet 23 Tsop-6

Contextual Info: Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21

Si3586DV

Contextual Info: SPICE Device Model Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range