SI4122 Search Results

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Si4122DY_RC

Abstract: SI4122DY AN609 121621
Contextual Info: Si4122DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: SPICE Device Model Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

81220

Abstract: 68665
Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: SPICE Device Model Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model Si4122DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

81220

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Si4133-GT

Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

Si4133G-BT

Abstract: Si4113G Si4122G Si4123G Si4123G-BT Si4133G Si4133G-BM PLL IC 566 Si412 Synthesizers with 3.0 GHz Integer PLL
Contextual Info: Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Ordering Information: See page 28. Applications Pin Assignments GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular telephones GPRS data terminals

Si4112G

Abstract: Si4113G Si4122G Si4123G Si4133G Si4133G-BT Si4133G-EVB Si4133G-KT
Contextual Info: Si4133G RF Synthesizer for GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers: RF1 900 MHz to 1.8 GHz RF2 750 MHz to 1.5 GHz • IF Synthesizer: IF 62.5 MHz to 1.0 GHz • Settling time <150 µS for multi-slot data

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Si3015-FS

Abstract: Si3010-FS ISOmodem Si4133-EVB Si4133-BM bt 1840 SI2400 Si4112-BM opto phase detector Si4133M-EVB
Contextual Info: NEXT BACK SILICON LABORATORIES RF Synthesizers and Modems XIN PWDN SDATA SCLK Serial Interface SEN 22-bit Data Register RFLA Phase Detector RF1 N XIN RF2 RFLC Phase Detector SDATA SCLK Serial Interface SEN 22-bit Data Register RF1 N R RFOUT Phase Detector

f311 silabs

Abstract: F321 silabs C8051F350DK silabs f321 Si3010-FS C8051F060 C8051F064 C8051F120DK C8051F330DK C8051F040
Contextual Info: Silicon Labs Digi-Key Catalog High Performance Mixed-Signal Microcontrollers Precision Mixed-Signal Microcontrollers Full-Featured MCUs with up to 100 MIPS and 1Msps 16 Bit ADCs The Precision Mixed-Signal microcontroller family combines high-precision analog data converters with a high-throughput 8051 CPU making them

50 33g

Contextual Info: Si4133/33G-EVB E VALUATION B OA RD F O R T H E S YNTHESIZER F AMILIES Description The Si4133/Si4133G synthesizer family evaluation board is a complete, PC-based evaluation platform for the following Silicon Laboratories devices and their derivatives:  Si4133

0022J

Abstract: s14133 ICS-18
Contextual Info: S I L I C ON S i4 1 2 3 / 2 2 / 1 3/1 2 L AB ORAT ORI E S D ual-B an d RF S y n t h e s i z e r W i t h I n t e g r a t e d V C O s F o r W ireless C om m unications Features • Dual-Band RF Synthesizers • RF1: 900 MHz to 1.8 GHz • RF2: 750 MHz to 1.5 GHz

Si412

Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

gsm transceiver

Abstract: PROGRAMMABLE SYNTHESIZER voltage controlled oscillator synthesizer Si4113G Si4122G Si4123G Si4133G Si4133G-X2 Si4133GX2-DS GSM kit for silicon
Contextual Info: Si4133G RF Synthesizer for GSM/GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz • IF Synthesizer IF: 500 MHz to 1.0 GHz • Settling time 140 µsec for multi-slot data

IC vco 900 1800 mhz

Abstract: Si4133G-BM Si4113G Si4122G Si4123G Si4123G-BT Si4133G Si4133G-BT
Contextual Info: Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Ordering Information: See page 28. Applications Pin Assignments GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular telephones GPRS data terminals

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SI4133-D-GM

Abstract: SI4112-D-GT SI4133-GT si4133-d-gt SI4133-GM IC vco 900 1800 mhz Si4112 Si4113 Si4122 Si4123
Contextual Info: Si4133 Si4123/22/13/12 D U A L - B A N D R F S Y N T H E S I Z E R W I T H I N TE G R A T E D V C O S F OR W I R E L E S S C O M M U N I C A T I O N S FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz  Integrated VCOs, loop filters, 