SI4413 Search Results

Si4413DY

Contextual Info: SPICE Device Model Si4413DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

c 6092

Abstract: Si4413CDY transistor 0882 AN609
Contextual Info: Si4413CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

74182

Abstract: 74182 data sheet 74182 datasheet S-60675 Si4413ADY
Contextual Info: SPICE Device Model Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74307

Abstract: mosfet 4468 4484 AN609 Si4413ADY 112562
Contextual Info: Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS

Si4413DY

Abstract: Si4413DY-T1-E3
Contextual Info: Si4413DY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0095 at VGS = - 10 V - 13 0.0145 at VGS = - 4.5 V - 10 • TrenchFET Power MOSFET Pb-free - 30 APPLICATIONS Available RoHS* • Notebook

4468

Abstract: 4802 0422 AN609 Si4413DY
Contextual Info: Si4413DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4413CDY

Abstract: si4413C
Contextual Info: SPICE Device Model Si4413CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4413ADY

Abstract: Si4413ADY-T1-E3
Contextual Info: Si4413ADY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • TrenchFET Power MOSFET APPLICATIONS RoHS COMPLIANT • Notebook - Load switch

Contextual Info: New Product Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • TrenchFET Power MOSFET APPLICATIONS RoHS COMPLIANT • Notebook - Load switch

Contextual Info: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS

Si4413ADY

Abstract: Si4413ADY-T1-E3 Si4413ADY-T1-GE3
Contextual Info: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS

Si4413CDY

Contextual Info: SPICE Device Model Si4413CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4413DY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0095 at VGS = - 10 V - 13 0.0145 at VGS = - 4.5 V - 10 • TrenchFET Power MOSFET Pb-free - 30 APPLICATIONS Available RoHS* • Notebook

Contextual Info: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS

Si4413DY

Contextual Info: Si4413DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0095 @ VGS = -10 V -13 0.0145 @ VGS = -4.5 V - 10 D TrenchFETr Power MOSFET APPLICATIONS D Notebook - Load switch - Battery switch -30 S

Si4413DY

Contextual Info: SPICE Device Model Si4413DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

56-03-2

Abstract: 0723 AN609 75576 Si4413BDY
Contextual Info: Si4413BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

SI4413DY

Contextual Info: Si4413DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0095 @ VGS = -10 V -13 0.0145 @ VGS = -4.5 V - 10 D TrenchFETr Power MOSFET APPLICATIONS D Notebook - Load switch - Battery switch -30 S

Contextual Info: Si4413ADY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • TrenchFET Power MOSFET APPLICATIONS RoHS COMPLIANT • Notebook - Load switch

ac power adapter for notebook schematic

Abstract: 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8 ISL6255
Contextual Info: ISL6255EVAL1Z Evaluation Board Setup Procedure April 10, 2007 Application Note AN1296.0 General Description Features The ISL625xEVAL1B EV kit includes all the circuitry needed to demonstrate the capabilities of the ISL6255 Lithium-Ion battery-charger with integrated AC adapter current limit. The

ac power adapter for notebook schematic

Abstract: 6256HRZ power adapter for notebook schematic top marking 91a sot23 DIODE smd marking R12 R20 marking R24 marking DATASHEET resistor smd 0805 ISL6256HRZ ISL6256AHRZ
Contextual Info: ISL6256AEVAL1Z Evaluation Board Setup Procedure Application Note October 26, 2007 AN1363.0 Low Cost Multi-Chemistry Battery Charger Controller Features The ISL6256, ISL6256A is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries. High Efficiency is

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

Contextual Info: ISL6253 Data Sheet August 2004 Highly Integrated Battery Charger for Notebook Computers Features • ±0.5% Voltage Accuracy The ISL6253 is a highly integrated battery charger controller for Li-Ion/Li-Polymer batteries. High Efficiency is achieved by a synchronous buck topology and the use of a MOSFET,