SI4425 Search Results

Contextual Info: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425DY

Contextual Info: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –30 ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4425BDY

Abstract: 15TR13
Contextual Info: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

Contextual Info: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI4425DY-T1

Abstract: SI4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4425BDY vs. Si4425DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4425BDY Replaces Si4425DY Si4425BDY-E3 (Lead (Pb)-free version) Replaces Si4425DY Si4425BDY-T1 Replaces Si4425DY-T1

Si4425BDY

Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425DDY

Abstract: Si4425DDY-T1-GE3
Contextual Info: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425DY

Contextual Info: Si4425DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: SPICE Device Model Si4425DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features -11 A, -30 V. RDS ON = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench

SI4425BDY

Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425DY

Contextual Info: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 30 ID (A) 0.014 @ VGS = - 10 V "11 0.023 @ VGS = - 4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4425DDY

Abstract: Si4425DDY-T1-GE3
Contextual Info: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

DSA003103

Abstract: Si4425BDY Si4425BDY-T1
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = - 10 V - 11.4 APPLICATIONS 0.019 @ VGS = - 4.5 V - 9.1 D Load Switches

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

mosfet 4800

Abstract: Si4425DY S4945
Contextual Info: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

7916

Abstract: AN609 Si4425BDY
Contextual Info: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 407

Abstract: 2812 4311 4311 mosfet transistor AN609 Si4425DDY
Contextual Info: Si4425DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

SI4425DDY

Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

21862

Abstract: Si4425BDY S2186
Contextual Info: Si4425BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = -10 V -1 1.4 APPLICATIONS 0.019 @ VGS = -4.5 V - 9.1 D Load Switches