SI4842 Search Results

Si4842DY

Abstract: S-02445
Contextual Info: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4842BDY

Abstract: Si4842DY Si4842DY-T1-E3 Si4842BDY-T1-E3 Si4842DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4842BDY vs. Si4842DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4842BDY-T1-E3 Replaces Si4842DY-T1-E3 Si4842BDY-T1-E3 Replaces Si4842DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4842BDY

Abstract: Si4842BDY-T1-E3
Contextual Info: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8

Si4842DY

Abstract: Si4842DY-T1 Si4842DY-T1-E3
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY

Si4842DY

Contextual Info: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8

Si4842BDY

Abstract: Si4842BDY-T1-E3 Si4842BDY-T1-GE3
Contextual Info: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4842DY

Contextual Info: SPICE Device Model Si4842DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Contextual Info: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8

SI4842BDY-T1-E3

Abstract: Si4842BDY Si4842BDY-T1-GE3
Contextual Info: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

S-41576-Rev

Abstract: Si4842DY Si4842DY-T1 Si4842DY-T1-E3
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY

Si4842DY

Abstract: NC1036 71482
Contextual Info: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

2sc9018

Abstract: SL4X30MW100T AN602 2sc9018 transistor
Contextual Info: AN602 Si4822/26/27/40/44 天 线 原 理 图 、 布 局 和 设 计 指 南 1. 引言 本文档提供了常规 Si4822/26/27/40/44 设计和 AM/FM/SW 天线选型指南，包括原理图、 BOM 和 PCB 布局。所有 用户均应遵守 “2. Si4822/26/27/40/44 默认波段的定义及选择 ” 和 “3. Si48422/26/27/40/44 SSOP/SOIC 原理图

Contextual Info: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8

Contextual Info: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4842DY-T1-E3

Abstract: Si4842DY Si4842DY-T1
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY

AN609

Abstract: Si4842DY
Contextual Info: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8

Si4842DY

Abstract: Si4842DY-T1
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4842DY

Contextual Info: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

fr9220

Abstract: DPA426
Contextual Info: DPA423-426 DPA-Switch Family Highly Integrated DC-DC Converter ICs for Distributed Power Architectures Product Highlights VO Highly Integrated Solution • Eliminates 20-50 external components–saves space, cost • Integrates 200 V high frequency MOSFET, PWM control

CT7343

Abstract: m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"
Contextual Info: SC4810B/E High Performance Current Mode PWM Controller with Complementary Output, Programmable Delay POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4810B/E is a 16 pin BICMOS primary side PWM controller for use in Isolated DC-DC and off-line switching

R0805

Abstract: mosfet 4456 sot23-123
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and