SI550 Search Results

Contextual Info: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.

marking code ED

Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

Si5509DC

Abstract: s417
Contextual Info: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a

Si5504DC

Contextual Info: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

anritsu PSRR

Abstract: AN255 Si550 kvco vco 622 Si55
Contextual Info: AN255 R EPLACING 6 2 2 M H Z VCSO DEVICES W I T H T HE Si55 X V C X O 1. Introduction The Silicon Laboratories Si550 is a high-performance, voltage-controlled crystal oscillator VCXO device that is suitable for use in SONET/SDH phase-locked loop (PLL) applications. The Si550 is available in a 5x7 mm package

AN609

Abstract: Si5504BDC
Contextual Info: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI5509DC

Abstract: Si5509DC-T1-GE3 si5509dc-t1-e3 si5509
Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

GSI550

Abstract: IGT7E50CS
Contextual Info: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l

Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

MOSFET QG

Abstract: Si5504DC
Contextual Info: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Applicable over the −55 to 125°C Temperature Range

8829 mosfet

Abstract: AN609 Si5509DC 17706 54256
Contextual Info: Si5509DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si5504DC New Product Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET

74166

Abstract: Si5509DC 74166 applications 10VID
Contextual Info: SPICE Device Model Si5509DC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si5504DC
Contextual Info: Si5504DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si5504

Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1
Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

Si5504DC-T1-E3

Abstract: Si5504DC
Contextual Info: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21

Si5509DC

Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

Si5504DC

Abstract: Si5504DC-T1
Contextual Info: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1

Si5504DC

Abstract: Si5504DC-T1
Contextual Info: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1

Si5504BDC

Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

Si5504BDC

Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5504BDC

Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET
Contextual Info: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1

62428

Abstract: Si5504DC "marking code D2"
Contextual Info: Si5504DC New Product Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET