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    SI6966EDQ Search Results

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    SI6966EDQ Price and Stock

    Vishay Siliconix SI6966EDQ-T1-E3

    MOSFET 2N-CH 20V 8TSSOP
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    DigiKey SI6966EDQ-T1-E3 Reel 3,000
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    RS SI6966EDQ-T1-E3 Bulk 3,000
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    Quest Components SI6966EDQ-T1-E3 6,440
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    Vishay Siliconix SI6966EDQ-T1-GE3

    MOSFET 2N-CH 20V 8TSSOP
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    DigiKey SI6966EDQ-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI6966EDQ-T1-E3

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    Bristol Electronics SI6966EDQ-T1-E3 2,998
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    Quest Components SI6966EDQ-T1-E3 2,398
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    Vishay Intertechnologies SI6966EDQ-T1

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    Bristol Electronics SI6966EDQ-T1 2,463 4
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    Quest Components SI6966EDQ-T1 1,970
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    Vishay Siliconix SI6966EDQT1E3

    DUAL N-CHANNEL 2.5-V (G-S) MOSFET, ESD PROTECTED Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI6966EDQT1E3 26,735
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    SI6966EDQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6966EDQ Vishay Siliconix MOSFETs Original PDF
    SI6966EDQ Vishay Telefunken N-channel 2.5-v (g-s) Mosfet Esd Protected Original PDF
    Si6966EDQ SPICE Device Model Vishay N-Channel 2.5-V (G-S) MOSFET, ESD Protected Original PDF
    SI6966EDQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8TSSOP Original PDF
    SI6966EDQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8TSSOP Original PDF

    SI6966EDQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Dual Gate mosfet spice

    Abstract: Si6966EDQ DUAL DIODE
    Text: SPICE Device Model Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966EDQ feedb15 08-Oct-05 Dual Gate mosfet spice DUAL DIODE

    60704 A

    Abstract: Si6966EDQ
    Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "5.2 0.040 @ VGS = 2.5 V "4.5 ESD Protected 4000 V D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6966EDQ 6 S2 5 G2


    Original     		PDF Si6966EDQ S-60704--Rev. 23-Nov-98 60704 A

    Untitled

    Abstract: No abstract text available
    Text: Si6966EDQ Siliconix Dual N-Ch 2.5-V G-S MOSFET, ESD Protected New Product PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.030 @ VGS = 4.5 V "5.2 0.040 @ VGS = 2.5 V "4.5 ESD Protected 4000 V D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6966EDQ


    Original     		PDF Si6966EDQ S-56972--Rev. 17-Aug-98

    74841

    Abstract: AN609 Si6966EDQ 18158
    Text: Si6966EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6966EDQ AN609 10-Jul-07 74841 18158

    MOSFET TSSOP-8 dual n-channel

    Abstract: No abstract text available
    Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V ± 5.2 0.040 at VGS = 2.5 V ± 4.5 • Halogen-free • ESD Protected: 4000 V RoHS COMPLIANT D1 D2 TSSOP-8


    Original     		PDF Si6966EDQ Si6966EDG-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 dual n-channel

    ESD spice

    Abstract: Si6966EDQ
    Text: SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966EDQ 22-Aug-02 ESD spice

    Si6966EDQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966EDQ 22-Oct-04

    Untitled

    Abstract: No abstract text available
    Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V ± 5.2 0.040 at VGS = 2.5 V ± 4.5 • Halogen-free • ESD Protected: 4000 V RoHS COMPLIANT D1 D2 TSSOP-8


    Original     		PDF Si6966EDQ Si6966EDG-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6966EDQ

    Abstract: No abstract text available
    Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V ± 5.2 0.040 at VGS = 2.5 V ± 4.5 • Halogen-free • ESD Protected: 4000 V RoHS COMPLIANT D1 D2 TSSOP-8


    Original     		PDF Si6966EDQ Si6966EDG-T1-GE3 18-Jul-08

    Si6966EDQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966EDQ 18-Jul-08

    60704 A

    Abstract: No abstract text available
    Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "5.2 0.040 @ VGS = 2.5 V "4.5 ESD Protected 4000 V D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6966EDQ 6 S2 5 G2


    Original     		PDF Si6966EDQ 08-Apr-05 60704 A

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3

    footprint ceramic capacitor footprint 0402

    Abstract: dale fuse resistor 0402 footprint SI6966EDQ .2uF Ceramic Capacitor MOSFET TSSOP-8
    Text: Short Circuit Protection Vishay Short Circuit Protection Any accidental short between the output pin and the GND pin of the FunctionPAK could cause permanent damage to the device. Whether that short is the result of component fatigue, accumulation of dust or debris over time, or accidental shorting by


    Original     		PDF SI6966EDQ 09-Sep-04 footprint ceramic capacitor footprint 0402 dale fuse resistor 0402 footprint SI6966EDQ .2uF Ceramic Capacitor MOSFET TSSOP-8