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    SI7414 Price and Stock

    Vishay Siliconix SI7414DN-T1-E3

    MOSFET N-CH 60V 5.6A PPAK1212-8
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    DigiKey SI7414DN-T1-E3 Digi-Reel 20,052 1
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    SI7414DN-T1-E3 Cut Tape 20,052 1
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    SI7414DN-T1-E3 Reel 18,000 3,000
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    RS SI7414DN-T1-E3 Bulk 3,000
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    New Advantage Corporation SI7414DN-T1-E3 9,000 1
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    Vishay Siliconix SI7414DN-T1-GE3

    MOSFET N-CH 60V 5.6A PPAK1212-8
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    DigiKey SI7414DN-T1-GE3 Digi-Reel 8,039 1
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    SI7414DN-T1-GE3 Cut Tape 8,039 1
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    SI7414DN-T1-GE3 Reel 6,000 3,000
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    New Advantage Corporation SI7414DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7414DN-T1-GE3

    Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 16P3844)
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    Avnet Americas SI7414DN-T1-GE3 Ammo Pack 11 Weeks, 1 Days 1
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    SI7414DN-T1-GE3 Reel 3,000
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    Verical SI7414DN-T1-GE3 12,000 3,000
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    Arrow Electronics SI7414DN-T1-GE3 12,000 9 Weeks 3,000
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    Newark SI7414DN-T1-GE3 Cut Tape 13 1
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    SI7414DN-T1-GE3 Reel 3,000
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    TME SI7414DN-T1-GE3 1
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    EBV Elektronik SI7414DN-T1-GE3 10 Weeks 3,000
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    Vishay Intertechnologies SI7414DN-T1-E3

    Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7414DN-T1-E3)
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    Avnet Americas SI7414DN-T1-E3 Reel 13 Weeks 3,000
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    Verical SI7414DN-T1-E3 6,000 3,000
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    Arrow Electronics SI7414DN-T1-E3 6,000 9 Weeks 3,000
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    Newark SI7414DN-T1-E3 Cut Tape 1,328 1
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    SI7414DN-T1-E3 Reel 3,000
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    TTI SI7414DN-T1-E3 Reel 15,000 3,000
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    Avnet Asia SI7414DN-T1-E3 3,000
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    EBV Elektronik SI7414DN-T1-E3 10 Weeks 3,000
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    Vishay Intertechnologies SI7414DN-TI-E3

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    Quest Components SI7414DN-TI-E3 238
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    • 1000 $1.1655
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    SI7414 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7414DN Vishay MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:60V; Case style:PowerPak SO-8; Current, Id cont:5.6A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.021R; SMD:1; Original PDF
    Si7414DN Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    SI7414DN Vishay Siliconix MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:60V; Case style:PowerPak SO-8; Current, Id cont:5.6A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.021R; SMD:1; Original PDF
    SI7414DN Vishay Siliconix MOSFETs Original PDF
    Si7414DN SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    SI7414DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 5.6A 1212-8 Original PDF
    SI7414DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 5.6A 1212-8 Original PDF

    SI7414 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7414DN SPICE Device Model

    Abstract: SI7414DN
    Text: SPICE Device Model Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7414DN 18-Jul-08 Si7414DN SPICE Device Model

    Si7414DN

    Abstract: No abstract text available
    Text: Si7414DN New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 8.7 0.036 @ VGS = 4.5 V 7.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low


    Original     		PDF Si7414DN 07-mm S-04764--Rev. 08-Oct-01

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7414DN

    Abstract: Si7414DN-T1
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK® 1212-8 Package with Low


    Original     		PDF Si7414DN 07-mm Si7414DN-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7414DN

    Abstract: Si7414DN SPICE Device Model
    Text: SPICE Device Model Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7414DN S-60147Rev. 13-Feb-06 Si7414DN SPICE Device Model

    Si7414DN-T1-GE3

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 11-Mar-11

    9622

    Abstract: AN609 Si7414DN
    Text: Si7414DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7414DN AN609 03-Mar-06 9622

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 @ VGS = 10 V 8.7 0.036 @ VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile


    Original     		PDF Si7414DN 07-mm Si7414DN-T1 08-Apr-05

    Si7414DN

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7414DN 0-to-10V 07-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 8.7 0.036 @ VGS = 4.5 V 7.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low


    Original     		PDF Si7414DN 07-mm S-04764â 08-Oct-01

    Si7414DN

    Abstract: Si7414DN-T1-E3 Si7414DN-T1-GE3 US-5020
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 11-Mar-11 US-5020

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 @ VGS = 10 V 8.7 0.036 @ VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile


    Original     		PDF Si7414DN 07-mm Si7414DN-T1 S-51210 27-Jun-05

    Si7414DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7414DN 18-Jul-08

    SI7414DN-T1-E3

    Abstract: Si7414DN Si7414DN-T1-GE3
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7414DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7414DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7414DN-T1-E3

    Abstract: Si7414DN-T1-GE3 SI7414-DN-T1-E3 Si7414DN 4430A
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 SI7414-DN-T1-E3 4430A

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    em 234 stepper

    Abstract: transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A
    Text: TMC260/TMC261/TMC262 DATA SHEET V. 1.10 / 2011-Mar-09 1 TMC260, TMC261, TMC262 Energy saving phase stepper interface and external power and protection high resolution microstep two driver with step and direction internal (TMC260, TMC261) or stage (TMC262) with diagnostics


    Original     		PDF TMC260/TMC261/TMC262 2011-Mar-09) TMC260, TMC261, TMC262 TMC261) TMC262) TMC262 TMC26corrected em 234 stepper transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS