SI786 Search Results

4800 mosfet

Abstract: Si7866DP
Contextual Info: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00325 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck

Si7866DP

Contextual Info: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck

SI7866ADP-T1-E3

Abstract: Si7866ADP Si7866DP-T1 74053 SI7866DP Si7866DP-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7866ADP vs. Si7866DP Description: N-Channel, 20 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7866ADP-T1-E3 Replaces Si7866DP-T1-E3 Si7866ADP-T1-E3 Replaces Si7866DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si7868ADP

Abstract: Si7868ADP-T1-E3 Si7868DP Si7868DP-T1 Si7868DP-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7868ADP vs. Si7868DP Description: Package: Pin Out: N-Channel, 20-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3 Si7868ADP-T1-E3 Replaces Si7868DP-T1 Summary of Performance:

Contextual Info: Not recommended for new designs, please refer to Si786 Si9130 Vishay Siliconix Pin-Programmable Dual Controller - Portable PCs FEATURES • Fixed 5 V and Programmable 3.3 V, 3.45 V, or 3.6 V Step-Down Converters • Less than 500 µA Quiescent Current per Converter

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

Si7864ADP-T1-E3

Abstract: Si7864ADP
Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

7555

Abstract: 9006 AN609 RC filter circuit
Contextual Info: Si7862ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

V23150

Abstract: Si7868ADP Si7868ADP-T1-E3
Contextual Info: Si7868ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00225 at VGS = 10 V 40 0.00275 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 46 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

9692-1

Abstract: an 7073 AN609 Si7860ADP 12888
Contextual Info: Si7860ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7866ADP

Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

an 7073

Abstract: AN609 Si7860DP
Contextual Info: Si7860DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7862DP

Contextual Info: SPICE Device Model Si7862DP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

MAX786

Abstract: Si4410 Si4435 Si786 Si9130 Si9140 Si9712
Contextual Info: Si786 Dual-Output Power-Supply Controller for Notebook Computers Features D D D D Fixed 5-V and 3.3-V Step-down Converters Less than 500-mA Quiescent Current per converter 25-mA Shutdown Current 5.5-V to 30-V Operating Range Description The Si786 Dual Controller for Portable Computer Power

Contextual Info: Si7862ADP Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 16 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0055 at VGS = 2.5 V 23 Qg (Typ.) 54 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.3 mΩ RDS(on)

Si7860DP

Contextual Info: Si7860DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS V 30 rDS(on) (W)

Contextual Info: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Buck Converter - High Side or Low Side • Synchronous Rectifier

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)

Contextual Info: Si786 Vishay Siliconix Dual-Output Power-Supply Controller FEATURES D D D D Fixed 5-V and 3.3-V Step-down Converters Less than 500-mA Quiescent Current per Converter 25-mA Shutdown Current 5.5-V to 30-V Operating Range DESCRIPTION The Si786 Dual Controller for Portable Computer Power

Contextual Info: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Buck Converter - High Side or Low Side • Synchronous Rectifier

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 29 0.0042 at VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)