SI9410 Search Results

Si9410BDY

Abstract: Si9410BDY-T1-E3
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410DY

Contextual Info: Si9410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SOĆ8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Power MOSFET, Fairchild

Abstract: Si9410DY
Contextual Info: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

133532

Abstract: AN609 Si9410BDY
Contextual Info: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8

Si9410BDY

Abstract: Si9410BDY-T1
Contextual Info: Si9410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SI9410DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55

HZG469

Abstract: Si9410DY
Contextual Info: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410DY

Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .

a-14-s

Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ

Si9410BDY

Contextual Info: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74ac123

Abstract: u21a C277 RSMRST U21B FUSE-1A C278 1k33 r566 r564
Contextual Info: 1 2 3 4 5 6 7 8 +5V VDD3 pull high at d/d bd pull high at d/d bd PWR_ON CPUPWR_ON 16,21 VDD3 14 12 R112 2 2 1 1 1 2 RSMRST# VDD3 C601 1U/NA 0805C 7,20 1 2 2 3 JP506 JP_SMT4_DFS JP505 JP_SMT4_DFS 1 S U510B 6 CEXT VCC GND 0/NA C594 0.1U 0603B Q14 SI9410DY_V/NA

Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .

Si9410DY

Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
Contextual Info: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D

Si9410DY

Contextual Info: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SO-8 N/C 8 D 2 7 D 3 6 D 5 D 1 S S G 4 G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

AW SO-8

Contextual Info: Si9410DY Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si9410BDY-T1

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

SI9410DY-T1

Abstract: Si9410BDY-E3 Si9410BDY-T1-E3 SI9410DY Si9410BDY TF11 Si9410BDY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9410BDY vs. Si9410DY Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9410BDY Replaces Si9410DY Si9410BDY-E3 (Lead (Pb)-free version) Replaces Si9410DY Si9410BDY-T1 Replaces Si9410DY-T1

Si9410BDY-E3

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY

Si9410BDY

Abstract: Si9410BDY-E3 Si9410BDY-T1
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY

Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET SI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G