SI9926 Search Results

Si9926ADY

Contextual Info: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET

SI9926CD

Abstract: Si9926CDY
Contextual Info: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si9926BDY

Contextual Info: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si9926DY VISHAY Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ VGS = 2.5 V ±5 .2 20 □i D, D2 D2 Q P p Q SO-8 6 Si s2 6 N-Channel MOSFET N-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED)

Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9926ADY

Contextual Info: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET

Contextual Info: Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si9926BDY Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1

SI9926BDY

Abstract: Si9926ADY Si9926BDY-T1 Si9926BDY-T1-E3 22SV SI9926BDY-E3
Contextual Info: Specification Comparison Vishay Siliconix Si9926BDY vs. Si9926ADY Description: N-Channel, 2.5 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9926BDY Replaces Si9926ADY Si9926BDY-E3 (Lead (Pb)-free version) Replaces Si9926ADY

Si9926DY

Contextual Info: Si9926DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

mosfet 5130

Abstract: Si9925DY Si9926DY
Contextual Info: Si9925DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.5 V "3.6 Recommended upgrade: Si9926DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1

SI9926CD

Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS

Contextual Info: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET

Si9926BDY

Abstract: Si9926BDY SPICE Device Model
Contextual Info: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4891

Abstract: 7476 AN609 Si9926BDY 45-4003 112-330
Contextual Info: Si9926BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9926 mosfet

Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
Contextual Info: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

Si9926CDY

Abstract: SI9926CDY-T1-GE3
Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9926CDY

Abstract: SI9926CDY-T1-E3 8089-2 SI9926CD
Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS

Si9926BDY

Contextual Info: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si9926BDY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 8.2 0.030 @ VGS = 2.5 V 6.7 D TrenchFETr Power MOSFETS D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1

Si9926BDY-T1-E3

Abstract: Si9926BDY Si9926BDY-T1
Contextual Info: Si9926BDY Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1

Si9926DY

Contextual Info: Si9926DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

SO-8 gs 069

Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET