SIC MOS Search Results

SIC MOS Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
MG800FXF2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV
MG250V2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A
MG250YD2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A

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ROHM Semiconductor BM2SC125FP2-LBZE2 AC/DC Converters Quasi-resonant AC/DC Converter Built-in 1700V SiC-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BM2SC125FP2-LBZE2	Reel			500	1 - 10 - 100 - 1000 $8 10000 $8	Buy Now

SIC MOS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiC POWER MOSFET Abstract: sic MOSFET APTMC60TLM14CAG Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG	PDF
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	APTMC60TLM14CAG	PDF
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	APTMC60TLM14CAG	PDF
CSD06060A Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago	Original	CPWR-RS03, CSD06060A cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio	PDF
Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TL11CT3AG	PDF
cree Sic Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060 Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago	Original	CPWR-RS03, cree Sic schottky diode FIT 155C CSD04060 CSD06060 CSD10060	PDF
Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TLM55CT3AG	PDF
Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TL11CT3AG	PDF
800V 40A mosfet Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG	PDF
Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TLM20CT3AG	PDF
Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	APTMC60TLM20CT3AG	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH03G65C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH02G65C5	PDF
Contextual Info: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management	Original	frequencie-PZ123BA080ME-M909L18Y Jan-14 12-mm com/M90	PDF

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH02G65C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH03G65C5	PDF
0116 solar Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH04G65C5 0116 solar	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH08G65C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDK12G65C5	PDF
D1665C5 Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH16G65C5 D1665C5	PDF
D0865C5 Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH08G65C5 650es D0865C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDK10G65C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH06G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH06G65C5	PDF
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	IDH04G65C5	PDF

SIC MOS Search Results

SIC MOS Result Highlights (5)

SIC MOS Price and Stock

ROHM Semiconductor BM2SC125FP2-LBZE2

SIC MOS Datasheets Context Search

SiC POWER MOSFET

CSD06060A

cree Sic

800V 40A mosfet

0116 solar

D1665C5

D0865C5