SIC PHOTODIODES Search Results

JEC 0.1 S

Abstract: JEC ELECTRONICS uv light PHOTO detector JEC 400 JEC 0.1 SO uv PHOTO detector UV photodiodes UV diode 280 nm solar photodiodes UV flame detection
Contextual Info: JEC Series SiC Ultraviolet Photodiodes SiC Ultraviolet Photodiodes Boston Electronics’s Silicon Carbide SiC photodetectors are photovoltaic devices similar to silicon solar cells, and need no external power supply (bias) to operate. Only light shorter than a wavelength of ~400 nm is absorbed and produces photocurrent.

SIC01S-18ISO90

Abstract: SiC Photodiodes
Contextual Info: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC

SIC01S-C18

Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-18

Contextual Info: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-18

Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01XL-5

Contextual Info: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01M-18

Contextual Info: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-5

Contextual Info: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-C5

Contextual Info: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01M-5LENS

Contextual Info: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-B18

Contextual Info: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

Contextual Info: SiC-photodiodes JEC1,6I / JEC5I preliminary data sheet characteristics : ♦ ♦ ♦ ♦ ♦ ♦ ♦ large area monolithic SiC photodiodes active aerea: 1,55 or 5 mm² spectral range: 215 … 360 nm high UV-responsivity: 0,16 A/W photodiode isolated to package

EPD-310-0-0

Abstract: 320nm
Contextual Info: EPD-310-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVB UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVB range 290 nm - 330nm , low cost chip based on SiC 1,2 Environmental technology, analytical techniques,

Contextual Info: SIC01D-B18 rev.6.1 04/15 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

Contextual Info: EPD-270-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVC UV glass with filter SiC TO-5 / TO-18 Description High spectral sensitivity in the UVC range 230 nm - 285nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,

Contextual Info: EPD-280-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA - UVC UV glass SiC TO-5 / TO-18 Description High spectral sensitivity in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC, excellence stability on high irradiance Environmental

Contextual Info: UV-Photodiodes EPD-280-0-0.3-L* Wavelength range Type Technology Case UVA - UVC UV glass with lens SiC TO-5 Description High spectral sensitivity by lens in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC 1,2 Responsivity 1 Applications Environmental technology, analytical techniques,

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

uv-tiamo-m

Contextual Info: UV-TIAMO-M v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.

uv-tiamo-s

Contextual Info: UV-TIAMO-S v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.

uv-tiamo

Contextual Info: UV-TIAMO v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.

uv-tiamo-bl

Contextual Info: UV-TIAMO-BL v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.

FPT102

Abstract: FPT720
Contextual Info: 1-15 Photodiodes BV lR - 5.0 iiA, H < 0.1 IIW/cm» Min Typ vn V R Tungsten R Q 0.9 ii Responïivtty. Respontivity •r ■l T (jA/mW/cm1 iiA/mW/cm' V „« -1 0 V V „ = -1 0 V H £ 0.1 MW/cm> H —20 mW/em* Tc = 2854K No bias, GaAs Typ Max Min Typ Min Typ

E3081

Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Contextual Info: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be