SIC WAFER 100 MM Search Results

Nitride Epitaxy

Abstract: Gan on silicon substrate nitride 1E16 silicon carbide sic wafer
Contextual Info: Nitride Epitaxy Products Cree produces GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on up to 100 mm diameter SiC and sapphire substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specications 1 . Additional comments, terms and conditions may be found at the end of this document.

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

X-band Gan Hemt

Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Contextual Info: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2

Infineon diffusion solder

Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Contextual Info: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices

sic wafer

Contextual Info: Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes 1 ,a Gil Chung , M. J. Loboda1), Sid Sundaresan2) and Ranbir Singh2) 1 Dow Corning Compound Semiconductor Solutions, Midland MI 48611, USA 2 GeneSiC Semiconductor Inc., Dulles, VA, 20166, USA

Contextual Info: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

SiC BJT

Abstract: transistor 304
Contextual Info: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.

Infineon power diffusion process

Abstract: Infineon diffusion solder IDL04G65C5 IPW60R075CP IDL10G65C5 SIC DIODES IDL12G65C5
Contextual Info: Product Brief Features 650V SiC thinQ! Generation 5 diodes Your way is our way: improve efficiency and solution costs ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering

thyristor lifetime

Contextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.

Contextual Info: HIGH POWER SWITCH Silicon Carbide Thyristors usher in the Smart Grid Revolution These devices offer near-theoretical, on-state blocking voltage and switching performance Global demand for high-efficiency, green energy technologies and products has placed new challenges on the electrical grid, on efficient exploitation of renewable energy

Contextual Info: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have

Contextual Info: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

Contextual Info: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability

OCI 531

Abstract: m1b marking s1225 IEC60529 F3M-S1213 F3M-S1225
Contextual Info: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability

security access control system

Abstract: siemens fingertip VLSI Technology
Contextual Info: Security & Chip Card ICs Copyright Siemens AG 1998 All rights reserved HL CC M SIC tr 27.10.1998 fngtp01f_p.ppt, 1 Security and Convenience are the Driving Factors Security “It is the right person” Convenience “Ease of Use” Secure authentication with

Contextual Info: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States

M-20488-001

Abstract: Contact image sensor cmos image sensor AMIS-720649 PI6049A cis Linear Image Sensor amis Contact Image Sensor
Contextual Info: AMIS-720649: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-720649 PI6049A contact image sensor (CIS) is a 600 dots per inch (dpi) resolution linear image sensor, which employs AMI Semiconductor’s proprietary CMOS image sensing technology. The sensor contains an on-chip output amplifier,

PI6049A

Abstract: cmos SENSOR 15um
Contextual Info: REVISION NUMBER : REV 2 PAGES : 1 of 13 DATE : 2-13-04 PI6049A Contact Image Sensor Data Sheet PI6049A Data Sheet Key Features • • • • • • • • • •

Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,

Contextual Info: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author

1287-standard

Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
Contextual Info: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability