SIC-DIODE 1000V Search Results

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

diode schottky 1000V 10a

Abstract: SiC MOS APT0502
Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies D Features  G S  SiC Schottky Diode

Contextual Info: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

mosfet 10a 800v

Abstract: SOT-227 heatsink sic-diode 1000v APT0502 diode schottky 1000V 10a
Contextual Info: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

APT50MC120JCU2

Contextual Info: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 34mΩ max @ Tj = 25°C ID = 71A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

Contextual Info: APT100MC120JCU2 VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTR3216RWF/A PRELIMINARY SPEC WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

1203-005570

Abstract: CIE1931
Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description The source color devices are made with InGaN on SiC Light Emitting Diode.

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

LM 385 N

Abstract: CIE1931
Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP PRELIMINARY SPEC Part Number: AA4040RWC/J ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

CIE1931

Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.