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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TRS8E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L |
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TRS2E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 2 A, TO-220-2L |
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TRS10V65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8 |
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